Semiconductor device with recess and method of making

ABSTRACT

A semiconductor device is provided with a substrate made of a semiconductor material, an interconnect layer, at least one electronic element, and a sealing resin. The substrate has a main surface and a pair of lateral surfaces that are orthogonal to the main surface and face in opposite directions to each other. A recessed portion that is recessed from the main surface and has an opening portion that opens on at least one of the pair of lateral surfaces is formed in the substrate. The interconnect layer is formed on the substrate. The electronic element is an orientation sensor, for example, and is accommodated in the recessed portion of the substrate. The sealing resin covers the electronic element.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a semiconductor device and a method formaking a semiconductor device.

2. Description of Related Art

A semiconductor device that performs a specific function with respect toinput and output of current from outside has been proposed in variousforms (e.g., see JP-A-2012-99673). Generally, in order to perform thefunction of this semiconductor device, a plurality of elements eachconstituting part of an electrical circuit are incorporated. A metallead is used for the purpose of supporting these elements andestablishing an electrical connection therebetween. The number, shapeand size of this lead are determined according to the function, shapeand size of the plurality of elements. The plurality of elements mountedon this lead are covered with a sealing resin. The sealing resin is forprotecting these elements and part of the lead. Such a semiconductordevice is mounted for use on the circuit board of an electronicapparatus, for example.

The lead is often formed by punch processing using a metal mold, forexample. The technique using a metal mold has the advantage of beingable to form the lead efficiently and accurately. However, the leadgenerally differs in number, size and shape depending on the pluralityof elements. It is thus necessary to change the size and/or shape of thelead when the function or the like required of the semiconductor deviceis changed. In order to realize this, the metal mold inevitably needs tobe newly remade. Since the metal mold is comparatively expensive, thecost of the semiconductor device will be increased in the case where thesemiconductor device is produced in small batches.

Also, such electronic devices are mounted for use on the circuit boardof electronic apparatuses, for example. There are increasing demands forminiaturization of electronic devices following advances in technology.

SUMMARY OF THE INVENTION

The present invention was conceived under the above circumstances. Assuch, a main object of the present invention is to provide asemiconductor device and a method for making a semiconductor device thatenable a reduction in manufacturing cost and miniaturization to beachieved. Also, a main object of the present invention is to provide anelectronic device suitable for achieving miniaturization.

An electronic device according to a first aspect of the presentinvention is provided with a substrate made of a semiconductor materialand having a main surface and a back surface that face in oppositedirections to each other, a first electronic element disposed on thesubstrate, and a conductive layer electrically connected to the firstelectronic element. A through hole that passes through a portion of thesubstrate is formed in the substrate, the through hole having a throughhole inner surface, and the conductive layer being formed from a regionof the through hole inner surface on the main surface side to a regionof the through hole inner surface the back surface side.

Preferably, a recessed portion for element disposition that is recessedfrom the main surface is formed in the substrate, and the firstelectronic element is disposed in the recessed portion for elementdisposition.

Preferably, the recessed portion for element disposition has a depth of100 to 300 μm.

Preferably, the recessed portion for element disposition has a recessedportion bottom surface for element disposition that faces in a firstthickness direction that is one thickness direction of the substrate anda recessed portion lateral surface for element disposition that standsup from the recessed portion bottom surface for element disposition, andthe first electronic element is disposed on the recessed portion bottomsurface for element disposition.

Preferably, the recessed portion bottom surface for element dispositionis orthogonal to the thickness direction.

Preferably, the recessed portion bottom surface for element dispositionincludes two band-like surfaces that extend in one direction as viewedin the thickness direction, and the first electronic element is disposedon the two band-like surfaces.

Preferably, the recessed portion bottom surface for element dispositionhas a connecting surface that connects the two band-like surfaces asviewed in the thickness direction, and the connecting surface extends ina direction that intersects the direction in which each of the twoband-like surfaces extend.

Preferably, the recessed portion lateral surface for element dispositionis connected to the recessed portion bottom surface for elementdisposition.

Preferably, the recessed portion lateral surface for element dispositionslopes relative to the thickness direction.

Preferably, the recessed portion lateral surface for element dispositionis at an angle of 55 degrees relative to a plane that is orthogonal tothe thickness direction.

Preferably, the recessed portion lateral surface for element dispositionis connected to the main surface.

Preferably, the conductive layer is formed on the recessed portionlateral surface for element disposition.

Preferably, the conductive layer includes a plurality of main surfaceside interconnects, and the plurality of main surface side interconnectsare insulated from each other and are formed on the recessed portionlateral surface for element disposition.

Preferably, the electronic device is further provided with a bottomsurface electrode pad formed on the recessed portion bottom surface forelement disposition, and the bottom surface electrode pad iselectrically connected to the first electronic element and is interposedbetween the first electronic element and the conductive layer.

Preferably, a recessed portion for interconnects is formed in thesubstrate, and the recessed portion for interconnects communicates withthe through hole.

Preferably, the recessed portion for interconnects has a region thatoverlaps with the first electronic element as viewed in the thicknessdirection of the substrate.

Preferably, the recessed portion for interconnects entirely overlapswith the recessed portion for element disposition as viewed in thethickness direction.

Preferably, the recessed portion for interconnects has a depth of 250 to350 μm.

Preferably, there are a plurality of the recessed portion forinterconnects.

Preferably, the recessed portion for interconnects has a recessedportion lateral surface for interconnects, and the recessed portionlateral surface for interconnects is connected to the through hole innersurface.

Preferably, the recessed portion lateral surface for interconnectsslopes relative to the thickness direction.

Preferably, the recessed portion lateral surface for interconnects is atan angle of 55 degrees relative to a plane that is orthogonal to thethickness direction.

Preferably, the conductive layer is formed on the recessed portionlateral surface for interconnects.

Preferably, the conductive layer includes a plurality of main surfaceside interconnects, and the plurality of main surface side interconnectsare insulated from each other and are formed on the recessed portionlateral surface for interconnects.

Preferably, the main surface side interconnects have a region that islocated closer to a center of the through hole than is a portion of theconductive layer formed on the through hole inner surface, as viewed ina depth direction of the through hole.

Preferably, the through hole has a depth of 10 to 50 μm.

Preferably, a ratio of the depth of the through hole to a maximumopening size of the through hole as viewed in the thickness direction ofthe substrate is 0.2 to 5.

Preferably, there are a plurality of the through hole.

Preferably, the through hole inner surface extends in the thicknessdirection of the substrate.

Preferably, the conductive layer includes a plurality of back surfaceside interconnects, and the plurality of back surface side interconnectsare insulated from each other and are formed on the through hole innersurface.

Preferably, the substrate has a thickness of 200 to 550 μm.

Preferably, the substrate is made of a single-crystal semiconductormaterial.

Preferably, the semiconductor material is Si.

Preferably, the main surface and the back surface are orthogonal to thethickness direction of the substrate and are flat.

Preferably, the main surface is a (100) surface.

Preferably, the substrate has a first lateral surface, a second lateralsurface, a third lateral surface and a fourth lateral surface, the firstlateral surface, the second lateral surface, the third lateral surfaceand the fourth lateral surface all face in a direction that isorthogonal to the thickness direction of the substrate, and the firstlateral surface and the second lateral surface, the second lateralsurface and the third lateral surface, the third lateral surface and thefourth lateral surface, and the fourth lateral surface and the firstlateral surface are respectively connected to each other.

Preferably, the electronic device is further provided with an insulatinglayer formed on the substrate, and the insulating layer is interposedbetween the conductive layer and the substrate.

Preferably, the insulating layer is made of SiO₂ or SiN.

Preferably, the insulating layer includes a main surface side insulatingpart, and the main surface side insulating part is at least partiallyformed on the main surface of the substrate.

Preferably, the main surface side insulating part is formed by thermaloxidation.

Preferably, the insulating layer includes a hole inner surfaceinsulating part, and the hole inner surface insulating part is formed onthe through hole inner surface.

Preferably, the hole inner surface insulating part is formed by CVD.

Preferably, the insulating layer includes a back surface side insulatingpart, and the back surface side insulating part is at least partiallyformed on the back surface of the substrate.

Preferably, the back surface side insulating part is formed by thermaloxidation.

Preferably, the conductive layer includes a seed layer and a platinglayer, and the seed layer is interposed between the substrate and theplating layer.

Preferably, the seed layer has a thickness of less than or equal to 1μm, and the plating layer has a thickness of 3 to 10 μm.

Preferably, the seed layer is made of Cu, and the plating layer is madeof Cu.

Preferably, the electronic device is further provided with a mainsurface side insulating film that is at least partially formed on themain surface, and the conductive layer is interposed between the mainsurface side insulating film and the substrate.

Preferably, the electronic device is further provided with a backsurface side insulating film that is at least partially formed on theback surface, the back surface side insulating film has a region formedinside the through hole, and the conductive layer is interposed betweenthe back surface side insulating film and the substrate.

Preferably, the main surface side insulating film and the back surfaceside insulating film are made of SiN.

Preferably, the main surface side insulating film and the back surfaceside insulating film are formed by CVD.

Preferably, the electronic device is further provided with a mainsurface electrode pad formed on the main surface, and the main surfaceelectrode pad contacts the conductive layer and is electricallyconnected to the first electronic element.

Preferably, the electronic device is further provided with a backsurface electrode pad formed on the back surface, and the back surfaceelectrode pad contacts the conductive layer and is electricallyconnected to the first electronic element.

Preferably, the electronic device is further provided with a sealingresin part that fills the recessed portion for element disposition andcovers the first electronic element.

Preferably, the sealing resin part leaves the main surface electrode padexposed.

Preferably, the electronic device is further provided with a secondelectronic element and a third electronic element that are disposed onthe back surface side.

Preferably, the first electronic element is an integrated circuitelement, the second electronic element is an inductor, and the thirdelectronic element is a capacitor.

Preferably, a size of the second electronic element and the thirdelectronic element in the thickness direction of the substrate is 400 to600 μm.

An electronic device according to a second aspect of the presentinvention is provided with a substrate made of a semiconductor materialand having a main surface and a back surface that face in oppositedirections to each other, a first electronic element and an additionalfirst electronic element disposed on the substrate and stacked one onanother, and a conductive layer electrically connected to the firstelectronic element. A through hole that passes through a portion of thesubstrate is formed in the substrate, the through hole having a throughhole inner surface, and the conductive layer being formed from a regionof the through hole inner surface on the main surface side to a regionof the through hole inner surface the back surface side.

Preferably, a recessed portion for element disposition that is recessedfrom the main surface is formed in the substrate, and the firstelectronic element is disposed in the recessed portion for elementdisposition.

Preferably, the recessed portion for element disposition has a recessedportion bottom surface for element disposition that faces in a firstthickness direction that is one thickness direction of the substrate,and a recessed portion lateral surface for element disposition thatstands up from the recessed portion bottom surface for elementdisposition, and the first electronic element is disposed on therecessed portion bottom surface for element disposition.

Preferably, the recessed portion bottom surface for element dispositionis orthogonal to the thickness direction.

Preferably, the recessed portion lateral surface for element dispositionslopes relative to the thickness direction.

Preferably, the recessed portion lateral surface for element dispositionis at an angle of 55 degrees relative to a plane that is orthogonal tothe thickness direction.

Preferably, the recessed portion lateral surface for element dispositionis connected to the main surface.

Preferably, an additional recessed portion for element disposition thatis recessed from the recessed portion for element disposition is formedin the substrate, and the additional first electronic element isdisposed in the additional recessed portion for element disposition.

Preferably, a recessed portion for interconnects is formed in thesubstrate, and the recessed portion for interconnects communicates withthe through hole.

Preferably, the recessed portion for interconnects has a region thatoverlaps with the first electronic element as viewed in the thicknessdirection of the substrate.

Preferably, the recessed portion for interconnects entirely overlapswith the recessed portion for element disposition as viewed in thethickness direction.

Preferably, the recessed portion for interconnects has a recessedportion lateral surface for interconnects, and the recessed portionlateral surface for interconnects is connected to the through hole innersurface.

Preferably, the recessed portion lateral surface for interconnectsslopes relative to the thickness direction.

Preferably, the recessed portion lateral surface for interconnects is atan angle of 55 degrees relative to a plane that is orthogonal to thethickness direction.

Preferably, the conductive layer is formed on the recessed portionlateral surface for interconnects.

Preferably, the conductive layer includes a plurality of main surfaceside interconnects, and the plurality of main surface side interconnectsare insulated from each other and are formed on the recessed portionlateral surface for interconnects.

Preferably, the main surface side interconnects have a region that islocated closer to a center of the through hole than is a portion of theconductive layer formed on the through hole inner surface, as viewed ina depth direction of the through hole.

Preferably, the through hole has a depth of 10 to 50 μm.

Preferably, a ratio of the depth of the through hole to a maximumopening size of the through hole as viewed in the thickness direction ofthe substrate is 0.2 to 5.

Preferably, there are a plurality of the through hole.

Preferably, the through hole inner surface extends in the thicknessdirection of the substrate.

Preferably, the conductive layer include a plurality of back surfaceside interconnects, and the plurality of back surface side interconnectsare insulated from each other and are formed on the through hole innersurface.

Preferably, the substrate is made of a single-crystal semiconductormaterial.

Preferably, the semiconductor material is Si.

Preferably, the main surface and the back surface are orthogonal to thethickness direction of the substrate and are flat.

Preferably, the main surface is a (100) surface.

Preferably, the electronic device is further provided with a secondelectronic element disposed on the substrate, and the second electronicelement is disposed on an opposite side to the first electronic elementwith the through hole sandwiched therebetween.

Preferably, a back surface side recessed portion for element dispositionthat is recessed from the back surface is formed in the substrate, withthe recessed portion for element disposition as a main surface siderecessed portion for element disposition, and the second electronicelement is disposed in the back surface side recessed portion forelement disposition.

Preferably, the electronic device is further provided with an additionalsecond electronic element disposed on the substrate, the secondelectronic element and the additional second electronic element arestacked one on another, an additional back surface side recessed portionfor element disposition that is recessed from the back surface siderecessed portion for element disposition is formed in the substrate, andthe additional second electronic element is disposed in the additionalback surface side recessed portion for element disposition.

Preferably, the electronic device is further provided with an insulatinglayer formed on the substrate, and the insulating layer is interposedbetween the conductive layer and the substrate.

Preferably, the insulating layer is made of SiO₂ or SiN.

Preferably, the insulating layer includes a main surface side insulatingpart, and the main surface side insulating part is at least partiallyformed on the main surface of the substrate.

Preferably, the main surface side insulating part is formed by thermaloxidation.

Preferably, the insulating layer includes a hole inner surfaceinsulating part, and the hole inner surface insulating part is formed onthe through hole inner surface.

Preferably, the hole inner surface insulating part is formed by CVD.

Preferably, the insulating layer includes aback surface side insulatingpart, and the back surface side insulating part is at least partiallyformed on the back surface of the substrate.

Preferably, the back surface side insulating part is formed by thermaloxidation.

Preferably, the conductive layer includes a seed layer and a platinglayer, and the seed layer is interposed between the substrate and theplating layer.

Preferably, the seed layer has a thickness of less than or equal to 1μm, and the plating layer has a thickness of 3 to 10 μm.

Preferably, the seed layer is made of Cu, and the plating layer is madeof Cu.

Preferably, the electronic device is further provided with a mainsurface side insulating film that is at least partially formed on themain surface, and the conductive layer is interposed between the mainsurface side insulating film and the substrate.

Preferably, the electronic device is further provided with a backsurface side insulating film that is at least partially formed on theback surface, the back surface side insulating film has a region formedinside the through hole, and the conductive layer is interposed betweenthe back surface side insulating film and the substrate.

Preferably, the main surface side insulating film and the back surfaceside insulating film are made of SiN.

Preferably, the main surface side insulating film and the back surfaceside insulating film are formed by CVD.

Preferably, the electronic device is further provided with a mainsurface electrode pad formed on the main surface.

Preferably, the electronic device is further provided with a backsurface electrode pad formed on the back surface.

An electronic device unit according to a third aspect of the presentinvention is provided with a plurality of electronic devices accordingto the first aspect or the second aspect, and the plurality ofelectronic devices are stacked one on another.

Preferably, the plurality of electronic devices are joined to each othervia a conductive junction element.

A semiconductor device according to a fourth aspect of the presentinvention is provided with a substrate made of a semiconductor material,having a main surface and a pair of lateral surfaces that are orthogonalto the main surface and face in opposite directions to each other, andin which is formed a recessed portion that is recessed from the mainsurface and has an opening portion that opens on at least one of thepair of lateral surfaces, an interconnect layer formed on the substrate,one or more elements accommodated in the recessed portion, and a sealingresin that at least partially covers the one or more elements.

Preferably, the recessed portion has a pair of opening portions thatrespectively open on the pair of lateral surfaces.

Preferably, the semiconductor device has an additional element that atleast partially covers the one or more elements.

Preferably, the recessed portion accommodates the one or more elements,and includes a first recessed portion having a first bottom surface anda first sloping surface and a second recessed portion having a secondbottom surface that is connected to the first sloping surface and asecond sloping surface that is connected to the second bottom surfaceand the main surface.

Preferably, the additional element is supported by the second bottomsurface, and at least partially overlaps with the first recessed portionas viewed in a direction of the normal of the main surface.

Preferably, the additional element is supported by at least two regionsof the second bottom surface that sandwich the first recessed portion.

Preferably, at least one of the one or more elements is supported by thefirst bottom surface.

Preferably, at least one of the one or more elements is supported by thefirst sloping surface.

Preferably, the substrate is made of a single-crystal semiconductormaterial.

Preferably, the semiconductor material is Si.

Preferably, the main surface is a (100) surface, the first recessedportion has two of the first sloping surface, and the second recessedportion has two of the second sloping surface.

Preferably, the one or more elements include three orientation sensorelements that have detection reference axes that extend in differentdirections to each other.

Preferably, the interconnect layer has a plurality of external terminalsformed on the main surface.

Preferably, the interconnect layer is formed on the second bottomsurface, and has a plurality of second bottom surface pads for mountingthe additional element.

Preferably, the interconnect layer is formed on the first bottomsurface, and has a plurality of first bottom surface pads for mountingthe element.

Preferably, the interconnect layer is formed on the first slopingsurface, and has a plurality of first sloping surface pads for mountingthe element.

Preferably, the interconnect layer has a connection path that connectsany of the external terminal, the second bottom surface pad, the firstbottom surface pad and the first sloping surface pad to each other.

Preferably, the connection path passes via the second sloping surface.

Preferably, the connection path passes via the first sloping surface.

Preferably, the sealing resin includes a first sealing resin that coversat least one of the one or more elements and a second sealing resin thatat least partially covers the additional element.

Preferably, the second sealing resin entirely covers the additionalelement.

Preferably, the second sealing resin leaves the external terminalexposed.

According to a fifth aspect of the present invention, a method formaking a semiconductor device is provided. The method includes a step offorming one or more recessed portions that are elongated in a firstdirection in a substrate material, a step of forming an interconnectlayer on the substrate that includes the recessed portion, a step ofmounting a plurality of elements in a dispersed manner in the firstdirection so as to be accommodated in the recessed portion, a step offorming a sealing resin that covers the plurality of elements, and astep of cutting the substrate material and the sealing resin in a seconddirection that intersects both the first direction and a direction ofthe normal of the main surface, such that elements among the pluralityof elements are separated from each other.

Preferably, in the step of forming the recessed portion, a firstrecessed portion having a first bottom surface and a first slopingsurface and a second recessed portion having a second bottom surfacethat is connected to the first sloping surface and a second slopingsurface that is connected to the second bottom surface and the mainsurface are formed.

Preferably, in the step of mounting the plurality of elements, theplurality of elements are mounted so as to be accommodated in the firstrecessed portion.

Preferably, the method includes a step of mounting a plurality ofadditional elements such that each additional element at least partiallycovers one of the plurality of elements, after the step of mounting theplurality of elements and before the step of forming the sealing resin.

Preferably, in the step of mounting the plurality of additionalelements, the additional elements are supported by the second bottomsurface and at least partially overlapped with the first recessedportion as viewed in a direction of the normal of the main surface.

Preferably, in the step of mounting the plurality of elements, one ofthe plurality of elements is supported by the first bottom surface.

Preferably, in the step of mounting the plurality of elements, one ofthe plurality of elements is supported by the first sloping surface.

Preferably, the substrate is made of a single-crystal semiconductormaterial.

Preferably, the semiconductor material is Si.

Preferably, the main surface is a (100) surface, the first recessedportion has two of the first sloping surface, and the second recessedportion has two of the second sloping surface.

Preferably, the plurality of elements include an orientation sensorelement having a detection reference axis.

Other features and advantages of the present invention will becomeapparent from the detailed description that will be given below withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of an electronic device according to a firstembodiment of the present invention.

FIG. 2 is a diagram of the electronic device shown in FIG. 1 from whicha sealing resin part has been omitted.

FIG. 3 is a diagram of the electronic device shown in FIG. 2 from whicha first electronic element has been omitted.

FIG. 4 is a diagram showing only a substrate of the electronic deviceshown in FIG. 2.

FIG. 5 is a bottom view of the electronic device according to the firstembodiment of the present invention.

FIG. 6 is a diagram of the electronic device shown in FIG. 5 from whicha second electronic element and a third electronic element have beenomitted.

FIG. 7 is a diagram showing only a substrate of the electronic deviceshown in FIG. 6.

FIG. 8 is a cross-sectional view along a line VIII-VIII in FIG. 1.

FIG. 9 is a partially enlarged view of FIG. 8.

FIG. 10 is a cross-sectional view along a line X-X in FIG. 1.

FIG. 11 is a partially enlarged view of FIG. 10.

FIG. 12 is a cross-sectional view showing one process of a method formaking the electronic device shown in FIG. 1.

FIG. 13 is a diagram showing one process following on from FIG. 12.

FIG. 14 is a diagram showing one process following on from FIG. 13.

FIG. 15 is a diagram showing one process following on from FIG. 14.

FIG. 16 is a diagram showing one process following on from FIG. 15.

FIG. 17 is a diagram showing one process following on from FIG. 16.

FIG. 18 is a diagram showing one process following on from FIG. 17.

FIG. 19 is a cross-sectional view showing a cross-section correspondingto FIG. 10 at the time of performing the process shown in FIG. 18.

FIG. 20 is a partially enlarged view of FIG. 19.

FIG. 21 is a diagram showing one process following on from FIG. 20.

FIG. 22 is a diagram showing one process following on from FIG. 21.

FIG. 23 is a cross-sectional view showing a cross-section correspondingto FIG. 10 at the time of performing the process shown in FIG. 22.

FIG. 24 is a partially enlarged view of FIG. 23.

FIG. 25 is a diagram showing one process following on from FIG. 24.

FIG. 26 is a diagram showing one process following on from FIG. 25.

FIG. 27 is a diagram showing one process following on from FIG. 26.

FIG. 28 is a diagram showing one process following on from FIG. 27.

FIG. 29 is a diagram showing one process following on from FIG. 28.

FIG. 30 is a diagram showing one process following on from FIG. 29.

FIG. 31 is a cross-sectional view showing a cross-section correspondingto FIG. 10 in the case where the process shown in FIG. 30 has beenperformed.

FIG. 32 is a partially enlarged view of FIG. 31.

FIG. 33 is a diagram showing one process following on from FIGS. 30 to32.

FIG. 34 is a cross-sectional view showing a cross-section correspondingto FIG. 10 in the case where the process shown in FIG. 33 has beenperformed.

FIG. 35 is a partially enlarged view of FIG. 34.

FIG. 36 is a diagram showing one process following on from FIGS. 33 to35.

FIG. 37 is a cross-sectional view showing a cross-section correspondingto FIG. 10 in the case where the process shown in FIG. 36 has beenperformed.

FIG. 38 is a diagram showing one process following on from FIGS. 36 and37.

FIG. 39 is a cross-sectional view showing a cross-section correspondingto FIG. 10 in the case where the process shown in FIG. 38 has beenperformed.

FIG. 40 is a diagram showing one process following on from FIGS. 38 and39.

FIG. 41 is a cross-sectional view showing a cross-section correspondingto FIG. 10 in the case where the process shown in FIG. 40 has beenperformed.

FIG. 42 is a cross-sectional view schematically showing an electronicdevice unit according to a second embodiment of the present invention.

FIG. 43 is a partially enlarged view showing an area XLIII of FIG. 42 inenlarged form.

FIG. 44 is a cross-sectional view schematically showing an electronicdevice unit according to a first modification of the second embodimentof the present invention.

FIG. 45 is a partially enlarged view showing an area XLV of FIG. 44 inenlarged form.

FIG. 46 is a perspective diagram showing a semiconductor device based ona third embodiment of the present invention.

FIG. 47 is a plan view showing a main section of the semiconductordevice of FIG. 46.

FIG. 48 is a cross-sectional view along a line XLVIII-XLVIII in FIG. 47.

FIG. 49 is a cross-sectional view along a line XLIX-XLIX in FIG. 47.

FIG. 50 is a perspective diagram showing a substrate of thesemiconductor device of FIG. 46.

FIG. 51 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 52 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 53 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 54 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 55 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 56 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 57 is a perspective diagram showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 58 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 59 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 60 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 61 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 62 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 63 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 64 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 65 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 66 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 67 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 68 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 69 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 70 is a perspective diagram showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 71 is a cross-sectional view showing a main section of an exemplarymethod for making the semiconductor device of FIG. 46.

FIG. 72 is a plan view showing a main section of a semiconductor devicebased on a fourth embodiment of the present invention.

FIG. 73 is a cross-sectional view along a line LXXIII-LXXIII in FIG. 72.

FIG. 74 is a cross-sectional view along a line LXXIV-LXXIV in FIG. 72.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be specificallydescribed with reference to the drawings.

First Embodiment

A first embodiment of the present invention will be described usingFIGS. 1 to 41.

FIG. 1 is a plan view of an electronic device according to the firstembodiment of the present invention. FIG. 8 is a cross-sectional viewalong a line VIII-VIII in FIG. 1. FIG. 9 is a partially enlarged view ofFIG. 8. FIG. 10 is a cross-sectional view along a line X-X in FIG. 1.FIG. 11 is a partially enlarged view of FIG. 10.

An electronic device A1 shown in these diagrams is provided with asubstrate 1, an insulating layer 2, a conductive layer 3, a main surfaceside insulating film 41, a back surface side insulating film 42, a mainsurface electrode pad 51, a bottom surface electrode pad 52, a backsurface electrode pad 53, a sealing resin part 61, a conductive junction63, a first electronic element 71, a second electronic element 72, and athird electronic element 73.

FIG. 2 is a diagram of the electronic device A1 shown in FIG. 1 fromwhich the sealing resin part 61 has been omitted. FIG. 3 is a diagram ofthe electronic device A1 shown in FIG. 2 from which the first electronicelement 71 has been omitted. FIG. 4 is a diagram showing only thesubstrate 1 of the electronic device A1 shown in FIG. 2. FIG. 5 is abottom view of the electronic device A1 according to the firstembodiment of the present invention. FIG. 6 is a diagram of theelectronic device A1 shown in FIG. 5 from which the second electronicelement 72 and the third electronic element 73 have been omitted. FIG. 7is a diagram showing only the substrate 1 of the electronic device A1shown in FIG. 6. Note that, in FIGS. 1 to 3 and FIGS. 5 and 6, theinsulating layer 2, the main surface side insulating film 41 and theback surface side insulating film 42 are not illustrated.

The substrate 1 shown in FIGS. 1 to 11 is made of a single-crystalsemiconductor material. In the present embodiment, the substrate 1 ismade of single-crystal Si. The material of the substrate 1 is notlimited to Si, and may be SiC, for example. The substrate 1 has athickness of 200 to 550 μm, for example. The first electronic element71, the second electronic element 72 and the third electronic element 73are disposed on the substrate 1.

The substrate 1 has a main surface 111, a back surface 112, a firstlateral surface 113, a second lateral surface 114, a third lateralsurface 115, and a fourth lateral surface 116.

The main surface 111 faces in a first thickness direction Z1 which isone thickness direction Z. The main surface 111 is flat. The mainsurface 111 is orthogonal to the thickness direction Z. The main surface111 is a (100) surface or a (110) surface. In the present embodiment,the main surface 111 is a (100) surface.

The back surface 112 faces in a second thickness direction Z2 which isanother thickness direction Z. That is, the back surface 112 and themain surface 111 face in opposite directions to each other. The backsurface 112 is flat. The back surface 112 is orthogonal to the thicknessdirection Z.

The first lateral surface 113, the second lateral surface 114, the thirdlateral surface 115 and the fourth lateral surface 116 all face in adirection that is orthogonal to the thickness direction Z of thesubstrate 1. The first lateral surface 113, the second lateral surface114, the third lateral surface 115 and the fourth lateral surface 116are all flat. The first lateral surface 113 and the second lateralsurface 114, the second lateral surface 114 and the third lateralsurface 115, the third lateral surface 115 and the fourth lateralsurface 116, and the fourth lateral surface 116 and the first lateralsurface 113 are respectively connected to each other. Also, the firstlateral surface 113, the second lateral surface 114, the third lateralsurface 115 and the fourth lateral surface 116 are all connected to themain surface 111 and the back surface 112.

As shown in FIGS. 2 to 4, 9 to 11 and the like, a recessed portion 14for element disposition, a recessed portion 15 for interconnects and athrough hole 17 are formed in the substrate 1.

The recessed portion 14 for element disposition is recessed from themain surface 111. The first electronic element 71 is disposed in therecessed portion 14 for element disposition. The depth (distance in thethickness direction Z by which the main surface 111 is separated from arecessed portion bottom surface 142 for element disposition discussedlater) of the recessed portion 14 for element disposition is 100 to 300μm, for example. The recessed portion 14 for element disposition has arectangular shape as viewed in the thickness direction Z. The shape ofthe recessed portion 14 for element disposition is dependent on havingadopted the (100) surface as the main surface 111.

As clearly shown in FIG. 4, the recessed portion 14 for elementdisposition has a recessed portion side surface 141 for elementdisposition and a recessed portion bottom surface 142 for elementdisposition.

The recessed portion bottom surface 142 for element disposition faces inthe first thickness direction Z1 which is one thickness direction Z ofthe substrate 1. The first electronic element 71 is disposed on therecessed portion bottom surface 142 for element disposition. Therecessed portion bottom surface 142 for element disposition isorthogonal to the thickness direction Z. The recessed portion bottomsurface 142 for element disposition has two band-like surfaces 146 and aconnecting surface 147. The two band-like surfaces 146 each extend inone direction as viewed in the thickness direction Z. The firstelectronic element 71 is disposed on the two band-like surfaces 146. Theconnecting surface 147 connects the two band-like surfaces 146 as viewedin the thickness direction Z. The connecting surface 147 extends in adirection that intersects the direction in which each of the twoband-like surfaces 146 extend. In the present embodiment, the connectingsurface 147 extends in a direction that is orthogonal to the directionin which each of the two band-like surfaces 146 extend.

The recessed portion side surface 141 for element disposition shown inFIGS. 4, 9, 10 and the like stands up from the recessed portion bottomsurface 142 for element disposition. The recessed portion side surface141 for element disposition is connected to the recessed portion bottomsurface 142 for element disposition. The recessed portion side surface141 for element disposition slopes relative to the thickness directionZ. The recessed portion side surface 141 for element disposition is atan angle of 55 degrees relative to a plane that is orthogonal to thethickness direction Z. This is due to having adopted the (100) surfaceas the main surface 111. The recessed portion side surface 141 forelement disposition is connected to the main surface 111. The recessedportion side surface 141 for element disposition has four flat surfaces.

In the present embodiment, there are a plurality (two) of the recessedportion 15 for interconnects. The recessed portion 15 for interconnectscommunicates with the through hole 17. The recessed portion 15 forinterconnects has a region that overlaps with the first electronicelement 71 as viewed in the thickness direction Z of the substrate 1.The recessed portion 15 for interconnects entirely overlaps with therecessed portion 14 for element disposition as viewed in the thicknessdirection Z. The recessed portion 15 for interconnects has a depth of250 to 350 μm, for example (coincides with the size of a later-discussedrecessed portion side surface 151 for interconnects in the thicknessdirection Z). The shape of the recessed portion 15 for interconnects isdependent on having adopted the (100) surface as the main surface 111.

The recessed portion 15 for interconnects has a recessed portion sidesurface 151 for interconnects. The recessed portion side surface 151 forinterconnects slopes relative to the thickness direction Z. The recessedportion side surface 151 for interconnects is at an angle of 55 degreesrelative to the thickness direction Z. This is due to having adopted the(100) surface as the main surface 111. The recessed portion side surface151 for interconnects has four flat sides. The recessed portion sidesurface 151 for interconnects is connected to the recessed portion sidesurface 141 for element disposition. The recessed portion side surface151 for interconnects is connected to the recessed portion bottomsurface 142 for element disposition.

The through hole 17 shown in FIGS. 4, 7, 11 and the like passes througha portion of the substrate 1. In the present embodiment, there are aplurality (two) of the through hole 17. A depth D13 of the through hole17 is 10 to 50 μm, for example. A maximum opening size L11 of thethrough hole 17 as viewed in the thickness direction Z of the substrate1 is 10 to 50 μm, for example. The ratio of the depth D13 of the throughhole 17 to the maximum opening size L11 of the through hole 17 as viewedin the thickness direction Z of the substrate 1 is 0.2 to 5. In thepresent embodiment, the through hole 17 has a rectangular shape asviewed in the thickness direction Z.

The through hole 17 has a through hole inner surface 171.

The through hole inner surface 171 extends in the thickness direction Zof the substrate 1. The through hole inner surface 171 is connected tothe recessed portion side surface 151 for interconnects. The throughhole inner surface 171 has four flat sides. In the present embodiment,the through hole inner surface 171 is connected to the back surface 112.

The insulating layer 2 shown in FIGS. 9 to 11 and the like is interposedbetween the conductive layer 3 and the substrate 1. The insulating layer2 has a thickness of about 0.1 to 1.0 μm, for example. The insulatinglayer 2 is made of SiO₂ or SiN, for example.

The insulating layer 2 has a main surface side insulating part 24, ahole inner surface insulating part 27, and a back surface sideinsulating part 28.

The main surface side insulating part 24 is at least partially formed onthe main surface 111 of the substrate 1. In the present embodiment, themain surface side insulating part 24 is formed on the recessed portionside surface 141 for element disposition, the recessed portion bottomsurface 142 for element disposition and the recessed portion sidesurface 151 for interconnects, in addition to being formed on the mainsurface 111. The main surface side insulating part 24 is formed bythermal oxidation. The main surface side insulating part 24 is made ofSiO₂, for example.

The hole inner surface insulating part 27 is formed on the through holeinner surface 171. The hole inner surface insulating part 27 is formedby CVD (chemical vapor deposition). The hole inner surface insulatingpart 27 is made of SiN, for example.

The back surface side insulating part 28 is at least partially formed onthe back surface 112 of the substrate 1. The back surface sideinsulating part 28 is formed by thermal oxidation. The back surface sideinsulating part 28 is made of SiO₂, for example.

The conductive layer 3 shown in FIGS. 9 to 11 and the like iselectrically connected to the first electronic element 71, the secondelectronic element 72, and the third electronic element 73. Theconductive layer 3 is for constituting a current path between the firstelectronic element 71, the second electronic element 72, and the thirdelectronic element 73. The conductive layer 3 is formed on the mainsurface 111, the recessed portion side surface 141 for elementdisposition, the recessed portion bottom surface 142 for elementdisposition, the recessed portion side surface 151 for interconnects,the through hole inner surface 171, and the back surface 112. Morespecifically, the conductive layer 3 is formed from a region on the mainsurface 111 side of the through hole inner surface 171 to a region onthe back surface 112 side of the through hole inner surface 171.

As shown in FIGS. 9 to 11, the conductive layer 3 includes a seed layer31 and a plating layer 32.

The seed layer 31 is a base layer for forming a desired plating layer32. The seed layer 31 is interposed between the substrate 1 and theplating layer 32. The seed layer 31 is made of Cu, for example. The seedlayer 31 is formed by sputtering, for example. The seed layer 31 has athickness of less than or equal to 1 μm, for example.

The plating layer 32 is formed by electrolytic plating using the seedlayer 31. The plating layer 32 is made of Cu, for example. The platinglayer 32 has a thickness of about 3 to 10 μm, for example. The platinglayer 32 is thicker than the seed layer 31.

As shown in FIGS. 2, 3, 6, 10, 11 and the like, the conductive layer 3includes a plurality of main surface side interconnects 35 and aplurality of back surface side interconnects 36.

The main surface side interconnects 35 and the back surface sideinterconnects 36 are respectively for constituting a path forelectrically connecting two electrode pads (any two of the main surfaceelectrode pad 51, the bottom surface electrode pad 52, and the backsurface electrode pad 53) to each other.

The plurality of main surface side interconnects 35 are insulated fromeach other. In the present embodiment, a plurality (two) of the mainsurface side interconnects 35 are formed on one recessed portion sidesurface 141 for element disposition. Also, the remaining main surfaceside interconnects 35 are formed from the main surface 111 to therecessed portion bottom surface 142 for element disposition. As shown inFIG. 11, the main surface side interconnects 35 have a region 35C thatis located closer to the center of the through hole 17 than is a portion(back surface side interconnects 36) of the conductive layer 3 formed onthe through hole inner surface 171, as viewed in the direction of thedepth D13 of the through hole 17 (as viewed in the thickness directionZ).

The back surface side interconnects 36 are insulated from each other.The back surface side interconnects 36 is formed on the back surface112. As shown in FIG. 11, a given back surface side interconnect 36 isconnected to one of the main surface side interconnects 35.

As shown in FIG. 10, at least a portion of the main surface sideinsulating film 41 is formed on the main surface 111. The conductivelayer 3 is interposed between the main surface side insulating film 41and the substrate 1. As shown in FIGS. 10 and 11, at least a portion ofthe back surface side insulating film 42 is formed on the back surface112. The back surface side insulating film 42 has a region formed insidethe through hole 17. The conductive layer 3 is interposed between theback surface side insulating film 42 and the substrate 1. The mainsurface side insulating film 41 and the back surface side insulatingfilm 42 are made of SiN, for example. The main surface side insulatingfilm 41 and the back surface side insulating film 42 are formed by CVD,for example.

A plurality (six) of the main surface electrode pad 51 shown in FIGS. 1to 3, 10 and the like are formed on the main surface 111. The mainsurface electrode pad 51 contacts the conductive layer 3 and iselectrically connected to the first electronic element 71. The mainsurface electrode pad 51 has a structure in which a Ni layer, a Pd layerand an Au layer are stacked in order of approximation to the substrate1. In the present embodiment, the main surface electrode pad 51 has arectangular shape.

A plurality (six) of the bottom surface electrode pad 52 shown in FIGS.3, 10 and the like are formed on the recessed portion bottom surface 142for element disposition. The bottom surface electrode pad 52 iselectrically connected to the first electronic element 71, and isinterposed between the first electronic element 71 and the conductivelayer 3. The bottom surface electrode pad 52 contacts the conductivelayer 3. The bottom surface electrode pad 52 has a structure in which aNi layer, a Pd layer and an Au layer are stacked in order ofapproximation to the substrate 1. In the present embodiment, the bottomsurface electrode pad 52 has a rectangular shape.

A plurality (six) of the back surface electrode pad 53 shown in FIGS. 6,9 and 10 are formed on the back surface 112. The back surface electrodepad 53 contacts the conductive layer 3 and is electrically connected tothe first electronic element 71. The back surface electrode pad 53 has astructure in which a Ni layer, a Pd layer and an Au layer are stacked inorder of approximation to the substrate 1. In the present embodiment,the back surface electrode pad 53 has a rectangular shape.

The sealing resin part 61 shown in FIGS. 9 to 11 and the like fills therecessed portion 14 for element disposition and covers the firstelectronic element 71. The sealing resin part 61 leaves the main surfaceelectrode pad 51 exposed. On the other hand, the sealing resin part 61does not cover the second electronic element 72 and the third electronicelement 73. Exemplary materials of the sealing resin part 61 includeepoxy resin, phenol resin, polyimide resin, polybenzoxazole (PBO) resin,and silicone resin. The sealing resin part 61 may be either atranslucent resin or an opaque resin, but in the present embodiment ispreferably an opaque resin.

In the present embodiment, the first electronic element 71 is anintegrated circuit element, and is, specifically, an ASIC(application-specific integrated circuit) element. The size of the firstelectronic element 71 in the thickness direction Z is 80 to 100 μm, forexample.

The second electronic element 72 and the third electronic element 73 aredisposed on the back surface 112 of the substrate 1. In the presentembodiment, the second electronic element 72 is an inductor and thethird electronic element 73 is a capacitor. The second electronicelement 72 and the third electronic element 73 are electricallyconnected to the first electronic element 71. Specifically, the secondelectronic element 72 and the third electronic element 73 areelectrically connected to the first electronic element 71 via the mainsurface side interconnects 35 and the back surface side interconnects36. The size of the second electronic element 72 and the thirdelectronic element 73 in the thickness direction Z is 400 to 600 μm, forexample. Note that, alternatively to the present embodiment, the secondelectronic element 72 and the third electronic element 73 may beresistors or semiconductor modules.

The conductive junction 63 shown in FIG. 10 is interposed between thefirst electronic element 71 and the bottom surface electrode pad 52,between the second electronic element 72 and the back surface electrodepad 53, and between the third electronic element 73 and the back surfaceelectrode pad 53. The conductive junction 63 electrically connects thefirst electronic element 71 and the bottom surface electrode pad 52, thesecond electronic element 72 and the back surface electrode pad 53, andthe third electronic element 73 and the back surface electrode pad 53 toeach other.

Next, a method for making the electronic device A1 will be describedbelow, with reference to FIGS. 12 to 41.

First, the substrate 1 is prepared as shown in FIG. 12. The substrate 1is made of a single-crystal semiconductor material, and in the presentembodiment is made of single-crystal Si. The substrate 1 has a thicknessof about 200 to 550 μm, for example. The substrate 1 is of a size thatenables a plurality of substrates 1 of the abovementioned electronicdevice A1 to be obtained. That is, the following manufacturing processis premised on batch manufacturing a plurality of electronic devices A1.Although a method for making one electronic device A1 is possible, atechnique for batch manufacturing a plurality of electronic devices A1is more realistic when industrial efficiency is taken intoconsideration. Note that all substrates will be given as substrate 1,although the substrate 1 shown in FIG. 12 is not strictly the same asthe substrate 1 of the electronic device A1.

The substrate 1 has a main surface 111 and a back surface 112 that facein opposite directions to each other. In the present embodiment, asurface having a crystal orientation of (100), that is, a (100) surface,is adopted as the main surface 111.

Next, a mask layer 191C made of SiO₂ is formed by oxidizing, forexample, the main surface 111 and the back surface 112. The mask layer191C has a thickness of about 0.7 to 1.0 μm, for example.

Next, as shown in FIG. 13, patterning is performed by etching, forexample, on the main surface 111 side of the mask layer 191C. An openinghaving a rectangular shape, for example, is thereby formed in the masklayer 191C. The shape and size of this opening are set according to theshape and size of the recessed portion 14 for element disposition thatis to ultimately be obtained.

Next, as shown in FIG. 14, a mask layer 191D made of SiN is formed onthe main surface 111 and the back surface 112 by CVD, for example.Patterning is performed by etching, for example, on the main surface 111side of the mask layer 191D. Two rectangular openings are thereby formedin the main surface 111 side of the mask layer 191D. The shape and sizeof these openings are set according to the shape and size of therecessed portion 15 for interconnects that is to ultimately be obtained.

Next, as shown in FIG. 15, two recessed portions 15C are formed. The tworecessed portions 15C are formed by anisotropic etching using KOH, forexample. KOH is an example of an alkali etching solution that canrealize favorable anisotropic etching on single-crystal Si.

Next, as shown in FIG. 16, the mask layer 191D that is formed on themain surface 111 is removed by etching.

Next, as shown in FIG. 17, anisotropic etching using KOH is performed.Two recessed portions 15 for interconnects and two recessed portions 14for element disposition are thereby formed. As a result of theanisotropic etching, the recessed portion side surface 141 for elementdisposition and the recessed portion side surface 151 for interconnectsis at an angle of about 55 degrees to a plane that is orthogonal to thethickness direction Z, as mentioned above. Note that, as shown in FIG.17, the recessed portions 15 for interconnects do not pass through thesubstrate 1. This is in order to prevent metal particles from adheringto a mounting table during formation of a seed layer 31C shown withreference to FIG. 21 by sputtering.

Next, as shown in FIGS. 18 to 20, the mask layer 191D is removed byetching.

Next, as shown in FIGS. 18 to 20, an insulating layer 2 is formed on therecessed portion side surface 141 for element disposition, the recessedportion bottom surface 142 for element disposition, and the recessedportion side surface 151 for interconnects by thermally oxidizing thesesurfaces. The insulating layer 2 formed on the recessed portion bottomsurface 142 for element disposition and the recessed portion sidesurface 151 for interconnects forms the abovementioned main surface sideinsulating part 24. Note that since the substrate 1 is oxidized in thevicinity of the recessed portion side surface 141 for elementdisposition, the recessed portion side surface 141 for elementdisposition shown in FIGS. 18 to 20 and the recessed portion sidesurface 141 for element disposition shown in FIG. 17 are not strictlythe same, but description of the specification and drawings will begiven using the same reference numerals.

Next, as shown in FIG. 21, the seed layer 31C is formed. The seed layer31C is formed by patterning after performing sputtering, for example.The seed layer 31C is formed on the main surface 111, the recessedportion side surface 141 for element disposition, the recessed portionbottom surface 142 for element disposition, and the recessed portionside surface 151 for interconnects.

Next, as shown in FIGS. 22 to 24, a plating layer 32C is formed. Theplating layer 32C is formed by electrolytic plating using the seed layer31C, for example. As a result, a plating layer 32C made of Cu, forexample, is obtained. Main surface side interconnects 35 are therebyformed.

Next, as shown in FIG. 25, a main surface side insulating film 41 isformed on the main surface side interconnects 35. The main surface sideinsulating film 41 is formed by patterning after performing CVD.

Next, as shown in FIG. 26, the portion of the mask layer 191C formed onthe back surface 112 is removed by etching. The back surface sideinsulating part 28 is thereby formed.

Next, as shown in FIG. 27, a through hole 17 communicates with therecessed portion 15 for interconnects is formed by etching.

Next, as shown in FIG. 28, a hole inner surface insulating part 27 isformed on a through hole inner surface 171 of the through hole 17. Thehole inner surface insulating part 27 is formed performing sputtering onthe through hole inner surface 171, the main surface side interconnects35 and the back surface 112, and then performing patterning to removethe portion formed on the main surface side interconnects 35 and theback surface 112.

Next, as shown in FIG. 29, a seed layer 31D is formed. The seed layer31D is formed by patterning after performing sputtering, for example.The seed layer 31D is formed on the insulating layer 2 (hole innersurface insulating part 27 and back surface insulating part 28) formedon the through hole inner surface 171 and the back surface 112.

Next, as shown in FIGS. 30 to 32, a plating layer 32D is formed. Theplating layer 32D is formed by electrolytic plating using the seed layer31D, for example. As a result, a plating layer 32D made of Cu, forexample, is obtained. Back surface side interconnects 36 are therebyformed.

Next, as shown in FIGS. 33 to 35, a back surface side insulating film 42is formed on the back surface side interconnects 36. The back surfaceside insulating film 42 is formed by patterning after performing CVD.

Next, as shown in FIGS. 36 and 37, main surface electrode pads 51,bottom surface electrode pads 52, and back surface electrode pads 53 areformed. The main surface electrode pads 51, the bottom surface electrodepads 52, and the back surface electrode pads 53 are formed byelectroless plating a metal such as Ni, Pd and Au, for example.

Next, as shown in FIGS. 38 and 39, a first electronic element 71 isdisposed in the recessed portion 14 for element disposition. A solderball that will forma conductive junction 63 is formed on the firstelectronic element 71. Flux is applied to the solder ball. The firstelectronic element 71 is placed utilizing the adhesiveness of this flux.The disposition of the first electronic element 71 is completed bymelting the solder ball using a reflow furnace and then setting themelted solder.

Next, as shown in FIGS. 40 and 41, a sealing resin part 61 is formed.The sealing resin part 61 is formed by mainly filling the recessedportion 14 for element disposition with a photosetting resin materialthat has excellent permeability, for example, and setting the resinmaterial.

Next, although not illustrated, a second electronic element 72 and athird electronic element 73 are disposed on the back surface 112 side,in a similar manner to disposition of the first electronic element 71.Thereafter, the substrate 1 is sectioned using a dicer. The electronicdevice A1 shown in FIGS. 1 to 11 is thereby obtained.

Next, the operations and effects of the present embodiment will bedescribed.

In the present embodiment, a through hole 17 that passes through aportion of the substrate 1 is formed in the substrate 1. The throughhole 17 has a through hole inner surface 171. A conductive layer 3 isformed from a region on the main surface 111 side of the through holeinner surface 171 to a region on the back surface 112 side of thethrough hole inner surface 171. Such a configuration enables a currentpath from the main surface 111 side of the substrate 1 to the backsurface 112 side to be formed. Therefore, the through hole 17 can beformed without being restricted by the position of the first electronicelement 71. This is suited to achieving miniaturization of the size ofthe electronic device A1 as viewed in the thickness direction Z.

In the present embodiment, the second electronic element 72 is aninductor and the third electronic element 73 is a capacitor. Thus, thesecond electronic element 72 and the third electronic element 73 arecomparatively large elements. Accordingly, disposing the secondelectronic element 72 and the third electronic element 73 on the backsurface 112 rather than in the recessed portion 14 for elementdisposition means that the hole of the recessed portion 14 for elementdisposition does not need to be formed very deeply. That is, the area ofthe recessed portion side surface 141 for element disposition as viewedin the thickness direction Z does not need to be greatly enlarged.Therefore, the configuration of the present embodiment is suited toachieving miniaturization of the size of the electronic device A1 asviewed in the thickness direction Z.

In the present embodiment, the recessed portion side surface 141 forelement disposition slopes relative to the thickness direction Z. Such aconfiguration enables the recessed portion side surface 141 for elementdisposition to be formed comparatively flatly. Thus, the advantage offormation of the seed layer 31 (i.e., conductive layer 3) beingfacilitated can be enjoyed.

In the present embodiment, the recessed portion 15 for interconnects hasa region that overlaps with the first electronic element 71 as viewed inthe thickness direction Z of the substrate 1. Such a configuration issuited to miniaturization of the size of the electronic device A1 asviewed in the thickness direction Z.

In the present embodiment, the recessed portion side surface 151 forinterconnects slopes relative to the thickness direction Z. Such aconfiguration enables the recessed portion side surface 151 forinterconnects to be formed comparatively flatly. Thus, the advantage offormation of the seed layer 31 (i.e., conductive layer 3) beingfacilitated can be enjoyed.

In the present embodiment, the conductive layer 3 includes a pluralityof main surface side interconnects 35. The plurality of main surfaceside interconnects 35 are insulated from each other, and are formed inthe recessed portion side surface 151 for interconnects. With such aconfiguration, a plurality of current paths can be formed in a singlerecessed portion 15 for interconnects. Thus, the number of recessedportions 15 for interconnects to be formed in the electronic device A1can be reduced. This is suited to miniaturization of the size of theelectronic device A1 as viewed in the thickness direction Z.

In the present embodiment, the main surface side interconnects 35 have aregion 35C that is located closer to the center of the through hole 17than is a portion of the conductive layer 3 formed on the through holeinner surface 171, as viewed in the direction of the depth D13 of thethrough hole 17 (as viewed in the thickness direction Z). Such aconfiguration enables the back surface side interconnects 36 to beformed so as to reliably contact the main surface side interconnects 35.

In the present embodiment, the ratio of the depth D13 of the throughhole 17 to the maximum opening size L11 of the through hole 17 as viewedin the thickness direction Z of the substrate 1 is 0.2 to 5. Such aconfiguration enables the seed layer 31 to be reliably formed on thethrough hole inner surface 171 by sputtering.

In the present embodiment, the conductive layer 3 includes a pluralityof back surface side interconnects 36. The plurality of back surfaceside interconnects 36 are insulated from each other, and are formed onthe through hole inner surface 171. With such a configuration, aplurality of current paths can be formed in a single through hole 17.Thus, the number of through holes 17 to be formed in the electronicdevice A1 can be reduced. This is suited to miniaturization of the sizeof the electronic device A1 as viewed in the thickness direction Z.

Second Embodiment

A second embodiment of the present invention will be described usingFIGS. 42 and 43.

Note that, in the following description, configuration that is the sameas or similar to that described above will be given same referencenumeral, and description will be omitted as appropriate.

FIG. 42 is a cross-sectional view schematically showing an electronicdevice unit according to the second embodiment of the present invention.FIG. 43 is a partially enlarged view showing an area XLIII of FIG. 42 inenlarged form.

An electronic device unit B1 shown in these diagrams is provided with aplurality of electronic devices A21 and A22 that are stacked one onanother. In the present embodiment, the electronic device unit B1 has astructure in which a plurality (six) of memories (electronic elements)are stacked.

The electronic device A21 is provided with a substrate 1, an insulatinglayer 2, a conductive layer 3, a main surface electrode pad 51, a bottomsurface electrode pad 52, a back surface electrode pad 53, a conductivejunction 63, a first electronic element 761, and a additional firstelectronic element 762.

A main surface side recessed portion 14C for element disposition, anadditional main surface side recessed portion 14D for elementdisposition, a recessed portion 15 for interconnects, and a through hole17 are formed in the substrate 1. Because the main surface side recessedportion 14C for element disposition, the recessed portion 15 forinterconnects and the through hole 17 are substantially similar to therecessed portion 14 for element disposition, the recessed portion 15 forinterconnects and the through hole 17 in the first embodiment,description thereof will be omitted.

The additional main surface side recessed portion 14D for elementdisposition is recessed from the recessed portion bottom surface 142 forelement disposition in the main surface side recessed portion 14C forelement disposition. The additional main surface side recessed portion14D for element disposition communicates with the through hole 17.

Because the substrate 1 is substantially similar to the first embodimentexcept for these points, description thereof is omitted.

In the present embodiment, the first electronic element 761 and theadditional first electronic element 762 are both memories. The firstelectronic element 761 is disposed in the main surface side recessedportion 14C for element disposition. The additional first electronicelement 762 is disposed in the additional main surface side recessedportion 14D for element disposition.

Because the electronic device A21 is otherwise substantially similar tothe electronic device A1, description thereof will be omitted.

Because the electronic device A22 is substantially similar to theelectronic device A21, except for the fact that the through hole 17 andthe back surface electrode pad 53 are not provided, description thereofwill be omitted.

A conductive junction element 69 is interposed between the back surfaceelectrode pad 53 in the top electronic device A21 in FIG. 42 and themain surface electrode pad 51 of the middle electronic device A21. Thetwo electronic devices A21 are thereby joined to each other via theconductive junction element 69. Also, electrodes of the first electronicelement 761 and the additional first electronic element 762 in the topelectronic device A21 are electrically connected to electrodes of thefirst electronic element 761 and the additional first electronic element762 in the middle electronic device A21 via the conductive junctionelement 69. The conductive junction element 69 is derived from solder,for example.

A conductive junction element 69 is interposed between the back surfaceelectrode pad 53 of the middle electronic device A21 of FIG. 42 and themain surface electrode pad 51 of the electronic device A22. The twoelectronic devices A21 and A22 are thereby joined to each other via theconductive junction element 69. Also, electrodes of the first electronicelement 761 and the additional first electronic element 762 in themiddle electronic device A21 are electrically connected to electrodes ofthe first electronic element 761 and the additional first electronicelement 762 in the electronic device A22 via the conductive junctionelement 69. The conductive junction element 69 is derived from solder,for example.

Next, the operations and effects of the present embodiment will bedescribed.

In the present embodiment, a through hole 17 that passes through aportion of the substrate 1 is formed in the substrate 1. The throughhole 17 has a through hole inner surface 171. The conductive layer 3 isformed from a region on the main surface 111 side of the through holeinner surface 171 to a region on the back surface 112 side of thethrough hole inner surface 171. Such a configuration enables a currentpath from the main surface 111 side of the substrate 1 to the backsurface 112 side to be formed. Therefore, the through hole 17 can beformed without being restricted by the position of the first electronicelement 761 and the additional first electronic element 762. This issuited to achieving miniaturization of the size of the electronic deviceA21 as viewed in the thickness direction Z.

In the present embodiment, the recessed portion side surface 141 forelement disposition slopes relative to the thickness direction Z. Such aconfiguration enables the recessed portion side surface 141 for elementdisposition to be formed comparatively flatly. Thus, the advantage offormation of the seed layer 31 (i.e., conductive layer 3) beingfacilitated can be enjoyed.

In the present embodiment, the recessed portion 15 for interconnects hasa region that overlaps with the first electronic element 761 and theadditional first electronic element 762 as viewed in the thicknessdirection Z of the substrate 1. Such a configuration is suited toachieving miniaturization of the size of the electronic device A21 asviewed in the thickness direction Z.

In the present embodiment, the recessed portion side surface 151 forinterconnects slopes relative to the thickness direction Z. Such aconfiguration enables the recessed portion side surface 151 forinterconnects to be formed comparatively flatly. Thus, the advantage offormation of the seed layer 31 (i.e., conductive layer 3) beingfacilitated can be enjoyed.

In the present embodiment, as shown in FIG. 43, the conductive layer 3includes a plurality of main surface side interconnects 35. Theplurality of main surface side interconnects 35 are insulated from eachother, and are formed in the recessed portion side surface 151 forinterconnects.

With such a configuration, a plurality of current paths can be formed ina single recessed portion 15 for interconnects. Thus, the number ofrecessed portions 15 for interconnects to be formed in the electronicdevice A21 can be reduced. This is suited to achieving miniaturizationof the size of the electronic device A21 as viewed in the thicknessdirection Z.

In the present embodiment, the main surface side interconnects 35 have aregion 35C that is located closer to the center of the through hole 17than is a portion of the conductive layer 3 formed on the through holeinner surface 171, as viewed in the direction of the depth D13 of thethrough hole 17 (as viewed in the thickness direction Z). Such aconfiguration enables the back surface side interconnects 36 to beformed so as to reliably contact the main surface side interconnects 35.

In the present embodiment, the ratio of the depth D13 of the throughhole 17 to the maximum opening size L11 of the through hole 17 as viewedin the thickness direction Z of the substrate 1 is 0.2 to 5. Such aconfiguration enables the seed layer 31 to be reliably formed on thethrough hole inner surface 171 by sputtering.

In the present embodiment, the conductive layer 3 includes a pluralityof back surface side interconnects 36. The plurality of back surfaceside interconnects 36 are insulated from each other, and are formed onthe through hole inner surface 171. With such a configuration, aplurality of current paths can be formed in a single through hole 17.Thus, the number of through holes 17 to be formed in the electronicdevice A21 can be reduced. This is suited to achieving miniaturizationof the size of the electronic device A21 as viewed in the thicknessdirection Z.

First Modification of Second Embodiment

A first modification of the second embodiment of the present inventionwill be described using FIGS. 44 to 45.

FIG. 44 is a cross-sectional view schematically showing the electronicdevice unit according to the first modification of the second embodimentof the present invention. FIG. 45 is a partially enlarged view showingan area XLV of FIG. 44 in enlarged form.

An electronic device unit B2 shown in these diagrams is provided with aplurality of electronic devices A31 and A32 that are stacked one onanother. In the present modification, the electronic device unit B2 hasa structure in which a plurality (eight) of memories (electronicelements) are stacked.

The electronic device A31 differs from the electronic device A21 in thata back surface side recessed portion 16C for element disposition and anadditional back surface side recessed portion 16D for elementdisposition are formed in addition to the main surface side recessedportion 14C for element disposition and the additional main surface siderecessed portion 14D for element disposition, and a second electronicelement 771 and an additional second electronic device 772 are furtherprovided.

The back surface side recessed portion 16C for element disposition isrecessed from the back surface 112. The back surface side recessedportion 16C for element disposition is equivalent to the main surfaceside recessed portion 14C for element disposition turned upside down.Also, the additional back surface side recessed portion 16D for elementdisposition is recessed from the back surface side recessed portion 16Cfor element disposition. The additional back surface side recessedportion 16D for element disposition is equivalent to the additional mainsurface side recessed portion 14D for element disposition turned upsidedown. The additional back surface side recessed portion 16D for elementdisposition communicates with the through hole 17.

Because the substrate 1 is substantially similar to the electronicdevice A21 except for these points, description thereof will be omitted.

The second electronic element 771 and the additional second electronicdevice 772 are both memories. The second electronic element 771 isdisposed in the back surface side recessed portion 16C for elementdisposition. The additional second electronic device 772 is disposed inthe additional back surface side recessed portion 16D for elementdisposition.

Also, a bottom surface electrode pad 52 similar to the bottom surfaceelectrode pad 52 is formed in the back surface side recessed portion 16Cfor element disposition and the additional back surface side recessedportion 16D for element disposition.

Because the electronic device A31 is otherwise substantially similar tothe electronic device A21, description thereof will be omitted.

Because the electronic device A32 is substantially similar to theelectronic device A31 except for the fact that the back surfaceelectrode pad 53 is not provided, description thereof will be omitted.

A conductive junction element 69 is interposed between the back surfaceelectrode pad 53 of the electronic device A31 of FIG. 44 and the mainsurface electrode pad 51 of the electronic device A32. The twoelectronic devices A31 and A32 are thereby joined to each other via theconductive junction element 69. Also, electrodes of the first electronicelement 761 and the additional first electronic element 762 andelectrodes of the second electronic element 771 and the additionalsecond electronic device 772 in the electronic device A31 areelectrically connected to electrodes of the first electronic element 761and the additional first electronic element 762 and electrodes of thesecond electronic element 771 and the additional second electronicdevice 772 in the electronic device A32 via the conductive junctionelement 69. The conductive junction element 69 is derived from solder,for example.

Next, the operations and effects of the present modification will bedescribed.

In the present modification, a through hole 17 that passes through aportion of the substrate 1 is formed in the substrate 1. The throughhole 17 has a through hole inner surface 171. The conductive layer 3 isformed from a region on the main surface 111 side of the through holeinner surface 171 to a region on the back surface 112 side of thethrough hole inner surface 171. Such a configuration enables a currentpath from the main surface 111 side of the substrate 1 to the backsurface 112 side to be formed. Therefore, the through hole 17 can beformed without being restricted by the position of the first electronicelement 761 and the additional first electronic element 762. This issuited to achieving miniaturization of the size of the electronic deviceA31 and of A32 as viewed in the thickness direction Z.

In the present modification, the recessed portion side surface 141 forelement disposition slopes relative to the thickness direction Z. Such aconfiguration enables the recessed portion side surface 141 for elementdisposition to be formed comparatively flatly. Thus, the advantage offormation of the seed layer 31 (i.e., conductive layer 3) beingfacilitated can be enjoyed.

In the present modification, the recessed portion 15 for interconnectshas a region that overlaps with the first electronic element 761 and theadditional first electronic element 762 as viewed in the thicknessdirection Z of the substrate 1. Such a configuration is suited tominiaturization of the size of the electronic devices A31 and A32 asviewed in the thickness direction Z.

In the present modification, the recessed portion side surface 151 forinterconnects slopes relative to the thickness direction Z. Such aconfiguration enables the recessed portion side surface 151 forinterconnects to be formed comparatively flatly. Thus, the advantage offormation of the seed layer 31 (i.e., conductive layer 3) beingfacilitated can be enjoyed.

In the present modification, the conductive layer 3 includes a pluralityof main surface side interconnects 35. The plurality of main surfaceside interconnects 35 are insulated from each other, and are formed inthe recessed portion side surface 151 for interconnects. With such aconfiguration, a plurality of current paths can be formed in a singlerecessed portion 15 for interconnects. Thus, the number of recessedportions 15 for interconnects to be formed in the electronic devices A31and A32 can be reduced. This is suited to miniaturization of the size ofthe electronic devices A31 and A32 as viewed in the thickness directionZ.

In the present modification, the main surface side interconnects 35 havea region 35C that is located closer to the center of the through hole 17than is a portion of the conductive layer 3 formed on the through holeinner surface 171, as viewed in the direction of the depth D13 of thethrough hole 17 (as viewed in the thickness direction Z). Such aconfiguration enables the back surface side interconnects 36 to beformed so as to reliably contact the main surface side interconnects 35.

In the present modification, the ratio of the depth D13 of the throughhole 17 to the maximum opening size L11 of the through hole 17 as viewedin the thickness direction Z of the substrate 1 is 0.2 to 5. Such aconfiguration enables the seed layer 31 to be reliably formed on thethrough hole inner surface 171 by sputtering.

In the present modification, the conductive layer 3 includes a pluralityof back surface side interconnects 36. The plurality of back surfaceside interconnects 36 are insulated from each other, and are formed onthe through hole inner surface 171. With such a configuration, aplurality of current paths can be formed in a single through hole 17.Thus, the number of through holes 17 to be formed in the electronicdevices A31 and A32 can be reduced. This is suited to miniaturization ofthe size of the electronic devices A31 and A32 as viewed in thethickness direction Z.

The present invention is not limited to the abovementioned embodiments.Design changes can be freely made to the specific configurations of thevarious parts of the present invention.

FIGS. 46 to 49 show the semiconductor device based on a third embodimentof the present invention. A semiconductor device 1A of the presentembodiment is provided with a substrate 100A, an interconnect layer200A, three orientation sensor elements 311A, 312A and 313A, anintegrated circuit element 330A, two capacitors 343A, and a sealingresin 400A. Note that, in FIG. 46, the three orientation sensor elements311A, 312A and 313A, the integrated circuit element 330A, the twocapacitors 343A and the sealing resin 400A are indicated by imaginaryoutlines. Also, in FIG. 47, the sealing resin 400A is omitted, and thethree orientation sensor elements 311A, 312A and 313A, the integratedcircuit element 330A, and the two capacitors 343A are indicated withimaginary outlines. FIG. 48 is a cross-sectional view in a yz planealong a line III-III in FIG. 47, and FIG. 49 is a cross-sectional viewin a zx plane along a line IV-IV in FIG. 47.

The semiconductor device 1A is constituted as a surface-mountedorientation detection module that is capable of detecting orientation inthree directions using a configuration that will be described below. Togive an example of the size of the semiconductor device 1A, thesemiconductor device 1A has a size of about 1.5 mm×2.5 mm in plan viewand a thickness of about 0.6 mm.

A substrate 100A forms a base of the semiconductor device 1A, andconsists of a base 103A and an insulating layer 104A. The substrate 100Ahas a main surface 101A, a back surface 102A, a pair of lateral surfaces106A, and a recessed portion 105A. The substrate 100A has a thickness ofabout 600 μm, for example. Note that, in the present embodiment, themain surface 101A and the back surface 102A face in opposite directionsto each other in the z direction, and the z direction corresponds to thethickness direction of the semiconductor device 1A. Also, the xdirection and the y direction are both at a right angle to the zdirection. The pair of lateral surfaces 106A are both connected to themain surface 101A, and face in opposite directions to each other in thex direction.

The base 103A is made of a single-crystal semiconductor material, and inthe present embodiment is made of single-crystal Si. Also, theinsulating layer 104A, in the present embodiment, is made of SiO₂. Notethat the material of the base 103A is not limited to Si, and need onlybe a material that enables a recessed portion 105A that meets intentionsdiscussed later to be formed. The insulating layer 104A partially coversthe base 103A that faces out from the opposite side to the back surface102A. The insulating layer 104A has a thickness of about 0.1 to 1.0 μm,for example.

FIG. 50 is a perspective diagram showing the substrate 100A. In thepresent embodiment, a (100) surface of the base 103A is adopted as themain surface 101A. The recessed portion 105A is recessed toward the backsurface 102A from the main surface 101A. The recessed portion 105A has apair of opening portions 130A that open on the pair of lateral surfaces106A. Note that to favorably achieve the effects intended by the presentapplication which will be discussed later, the recessed portion 105Apreferably has a pair of opening portions 130A, but the presentapplication it not limited thereto and may be configured to have onlyone of the opening portions 130A. Also, the cross-sectional shape of therecessed portion 105A in the yx plane is constant. In the presentembodiment, the recessed portion 105A consists of a first recessedportion 110A and a second recessed portion 120A. The first recessedportion 110A is located on the back surface 102A side, and has a firstbottom surface 111A and two first sloping surfaces 112A. The secondrecessed portion 120A is located closer to the main surface 101A than isthe first recessed portion 110A, and has two second bottom surfaces 121Aand two second sloping surfaces 122A. The first recessed portion 110Aand the second recessed portion 120A have shapes that are dependent onhaving adopted the (100) surface as the main surface 101A.

As a result on the recessed portion 105A being formed, the main surface101A consists of two regions that are spaced in the y direction.

The first recessed portion 110A has a rectangular shape in plan view.The first recessed portion 110A has a depth of about 400 μm, forexample. The first bottom surface 111A has a rectangular shape in planview. The two first sloping surfaces 112A sandwich the first bottomsurface 111A in plan view, and have rectangular shapes that aresubstantially congruent with each other. Each first sloping surface 112Aslopes relative to the first bottom surface 111A. In the presentembodiment, the first sloping surfaces 112A are at an angle of about 55degrees relative to the xy plane. Note that the fact that the firstsloping surfaces 112A have substantially trapezoidal shapes that aresubstantially congruent with each other and the angle is 55 degrees aredependent on having adopted the (100) surface as the main surface 101A.

The second recessed portion 120A has a rectangular shape in plan view.The second recessed portion 120A has a depth of about 120 μm, forexample. The two second bottom surfaces 121A have rectangular shapes inplan view, and sandwich the first recessed portion 110A. Also, eachsecond bottom surface 121A is connected to a first sloping surface 112A.The two second sloping surfaces 122A surround the two second bottomsurfaces 121A and the first recessed portion 110A in plan view, and havesubstantially rectangular shapes. The second sloping surfaces 122A sloperelative to the second bottom surfaces 121A. In the present embodiment,the second sloping surfaces 122A are at an angle of about 55 degreesrelative to the xy plane. Note that the fact that the second slopingsurfaces 122A have a substantially trapezoidal shape and the angle is 55degrees is dependent on having adopted the (100) surface as the mainsurface 101A.

The interconnect layer 200A is for mounting the three orientation sensorelements 311A, 312A and 313A, the integrated circuit element 330A andthe two capacitors 343A, and is for constituting a current path betweenthese parts. The interconnect layer 200A is formed on the insulatinglayer 104A, and, in the present embodiment, has a structure in which abarrier/seed layer 201A and a plating layer 202A are stacked.

The barrier/seed layer 201A is a base layer for forming a desiredplating layer 202A, and is formed on the insulating layer 104A. Thebarrier/seed layer 201A consists of, for example, a Ti layer serving asa barrier layer and a Cu layer serving as a seed layer stacked on thebarrier layer that are formed on the insulating layer 104A. Thebarrier/seed layer 201A is formed by sputtering, for example.

The plating layer 202A is made of Cu, for example, and is formed byelectrolytic plating that utilizes the barrier/seed layer 201A. Theplating layer 202A has a thickness of about 5 μm, for example.

In the present embodiment, the interconnect layer 200A has a firstbottom surface pad 211A, a first sloping surface pad 212A, a secondbottom surface pad 213A, an external terminal 221A, and connection paths231A, 234A, 235A and 236A.

The first bottom surface pad 211A is formed on the first bottom surface111A of the first recessed portion 110A, and has a rectangular shape,for example. In the present embodiment, six first bottom surface pads211A are formed. In the present embodiment, the first bottom surfacepads 211A are used in order to mount the orientation sensor element 311Aand the two capacitors 343A.

The first sloping surface pad 212A is formed on two first slopingsurfaces 112A of the first recessed portion 110A, and has a rectangularshape, for example. In the present embodiment, two first slopingsurfaces pads 212A are formed on each of the two first sloping surfaces112A disposed sandwiching the first bottom surface 111A with a spacetherebetween in the y direction. The two first sloping surfaces pads212A of each first sloping surface 112A are disposed side-by-side in thex direction. In the present embodiment, the first sloping surface pads212A are used in order to mount the orientation sensor elements 312A and313A.

The second bottom surface pad 213A is formed on the two second bottomsurfaces 121A of the second recessed portion 120A, and has a rectangularshape, for example. In the present embodiment, on each second bottomsurface 121A, eight second bottom surface pads 213A are arrayed in the xdirection, and the two second bottom surface pads 213A are disposed witha space therebetween in the x direction. In the present embodiment, thesecond bottom surface pads 213A are used in order to mount theintegrated circuit element 330A.

The external terminal 221A is formed on the main surface 101A, and isused in order to surface mount the semiconductor device 1A to thecircuit board of an electronic apparatus, for example. In the presentembodiment, four external terminals 221A are formed in each of tworegions of the main surfaces 101A that are disposed sandwiching therecessed portion 105A with a space therebetween in the y direction.Also, one side of each external terminal 221A is in contact with theouter edge of the recessed portion 105A. The external terminal 221A areconfigured to have a structure in which a bump obtained by furtherelectroless plating a metal such as Ni, Pd or Au, for example, is formedon the abovementioned barrier/seed layer 201A and plating layer 202A. Asshown in FIGS. 48 and 49, the external terminal 221A is thereby formedto budge in the z direction.

The connection paths 231A, 234A, 235A and 236A are for constitutingpaths that electrically connect the first bottom surface pads 211A, thefirst sloping surface pads 212A, the second bottom surface pads 213A andthe external terminals 221A to each other.

The connection paths 231A constitute paths from the main surface 101A tothe second bottom surfaces 121A, and mainly electrically connect theexternal terminals 221A to the second bottom surface pads 213A. As shownin FIG. 47, each connection paths 231A reaches the second bottom surface121A via the second sloping surface 122A of the second recessed portion120A. The portion of each connection path 231A formed on the secondsloping surface 122A extends in the y direction in plan view, and doesnot slope relative to the y direction.

The connection paths 234A constitute paths from the second bottomsurfaces 121A to the first sloping surfaces 112A, and electricallyconnect the second bottom surface pads 213A to the first sloping surfacepads 212A. In the present embodiment, some of the connection paths 234Aextend linearly in the y direction in plan view. Also, other connectionpaths 234A are in a bent state on the first sloping surfaces 112A.

The connection paths 235A constitute paths that reach to the firstbottom surface 111A from the second bottom surfaces 121A via the firstsloping surfaces 112A, and electrically connect the second bottomsurface pads 213A to the first bottom surface pads 211A. In the presentembodiment, some of the connection paths 235A extend linearly in the ydirection in plan view. Also, other connection paths 235A are in a bentstate on one of the second bottom surfaces 121A, the first slopingsurfaces 112A and the first bottom surface 111A.

The connection paths 236A constitute the paths from the first slopingsurfaces 112A to the first bottom surface 111A, and electrically connectthe first sloping surface pads 212A to the first bottom surface pads211A. In the present embodiment, the connection paths 236A extend fromone first sloping surface pad 212A to a plurality of first bottomsurface pads 211A. Also, the connection paths 236A are in a bent stateon the first bottom surface 111A.

Note that, in the present embodiment, the external terminal 221A that islocated second from the left in the upper portion of FIG. 47 is a groundterminal. Also, the connection paths 231A, the second bottom surfacepads 213A, the connection paths 234A, the first sloping surface pads212A, the connection paths 236A, and the first bottom surface pads 211Athat are electrically connected to this external terminal 221A areconnected to ground.

The three orientation sensor elements 311A, 312A and 313A have detectionreference axes that extend in different directions to each other, andare used in order to detect the attitude of the semiconductor device 1Arelative to geomagnetism, for example. In the present embodiment, theorientation sensor elements 311A, 312A and 313A have magnetic cores314A, 315A and 316A, as shown in FIG. 47. The magnetic cores 314A, 315Aand 316A are metal rod-like members that extend in predetermineddirections, and the longitudinal directions thereof correspond to thedetection reference axes of the orientation sensor elements 311A, 312Aand 313A. The orientation sensor elements 311A, 312A and 313A furtherhave coils (not shown) formed so as to surround the magnetic cores 314A,315A and 316A. The orientation sensor elements 311A, 312A and 313A havea thickness of about 80 μm, for example.

In the present embodiment, the orientation sensor element 311A issupported by the first bottom surface 111A, and is mounted via solder351A using three first bottom surface pads 211A. As a result of thisform of mounting, the magnetic core 314A of the orientation sensorelement 311A extends in the x direction.

The orientation sensor element 312A is supported by the first slopingsurface 112A in the upper portion of FIG. 47, and is mounted via solder351A using three first sloping surface pads 212A. As a result of thisform of mounting, the magnetic core 315A of the orientation sensorelement 312A is at a right angle to the x direction, and extends in adirection that is included in an yz plane. This direction is parallel tothe first sloping surface 112A that supports the orientation sensorelement 312A.

The orientation sensor element 313A is supported by the first slopingsurface 112A in the lower portion of FIG. 47, and is mounted via solder351A using three first sloping surface pads 212A. As a result of thisform of mounting, the magnetic core 316A of the orientation sensorelement 313A is at a right angle to the x direction, and extends in adirection that is included in an yz plane. This direction is parallel tothe first sloping surface 112A that supports the orientation sensorelement 313A.

Also, in the present embodiment, the orientation sensors 311A, 312A and313A have a top surface located on an opposite side to a bottom surfaceon the substrate 100A side that is smaller than the bottom surface.Also, the lateral surfaces connecting the bottom surface and the topsurface slope relative to a direction in which the bottom surface andthe top surface are spaced from each other.

The integrated circuit element 330A is for controlling orientationdetection processing that uses the three orientation sensor elements311A, 312A and 313A. In the present embodiment, the integrated circuitelement 330A is constituted as an ASIC (application-specific integratedcircuit) element and has a thickness of about 80 to 100 μm.

The integrated circuit element 330A is supported by the second bottomsurfaces 121A, and is mounted via solder 351A utilizing the secondbottom surface pads 213A. As shown in FIG. 47, the integrated circuitelement 330A is in a state of being supported on two sides, as a resultof being mounted using a plurality of second bottom surface pads 213Adisposed with a space therebetween in the y direction. Also, theintegrated circuit element 330A covers most of the first recessedportion 110A except for a portion thereof in plan view. Also, theintegrated circuit element 330A, in plan view, entirely overlaps withthe orientation sensor elements 311A and 312A, and partially overlapswith the orientation sensor element 313A. Also, the integrated circuitelement 330A also overlaps with the two capacitors 343A. As shown inFIGS. 48 and 49, the integrated circuit element 330A is contained withinthe second recessed portion 120A in the z direction.

Direction detection processing by the integrated circuit element 330Ausing the orientation sensor elements 311A, 312A and 313A is performedas follows, for example.

As described above, the orientation sensor elements 311A, 312A and 313Ahave magnetic cores 314A, 315A and 316A that are each surrounded by acoil. As a result of the orientation sensor elements 311A, 312A and 313Abeing mounted in the abovementioned form, the orientation sensorelements 311A, 312A and 313A, that is, the magnetic cores 314A, 315A and316A, extend in different directions to each other. The directions inwhich these magnetic cores 314A, 315A and 316A extend are stored asknown information in the integrated circuit element 330A.

The two capacitors 343A are disposed on the first bottom surface 111A,and are disposed sandwiching the orientation sensor element 311A with aspace therebetween in the x direction. The two capacitors 343A and theorientation sensor element 311A are thereby disposed side-by-side in thex direction.

The semiconductor device 1A is able to three dimensionally detect theattitude of the semiconductor device 1A relative to geomagnetism, byusing the orientation sensor elements 311A, 312A and 313A based on atechnique disclosed in JP-A-2006-47267, for example (3-axis detection).The integrated circuit element 330A outputs the orientation detectionresult of the semiconductor device 1A as a signal, in response to anexternal instruction from the external terminals 221A or autonomously.

The sealing resin 400A covers the orientation sensor elements 311A, 312Aand 313A, the integrated circuit element 330A and the two capacitors343A, and fills the recessed portion 105A. In the present embodiment,the sealing resin 400A consists of a first sealing resin 410A and asecond sealing resin 420A. Both end faces of the sealing resin 400A inthe x direction are exposed from the substrate 100A. Also, both endfaces of the sealing resin 400A in the x direction are flush with thetwo lateral surfaces 106A of the substrate 100A.

The first sealing resin 410A largely fills the first recessed portion110A, and completely covers the orientation sensor elements 311A, 312Aand 313A and the two capacitors 343A. On the other hand, the firstsealing resin 410A does not cover the second bottom surface pads 213A orthe integrated circuit element 330A.

The second sealing resin 420A largely fills the second recessed portion120A, and completely covers the integrated circuit element 330A. On theother hand, the second sealing resin 420A leaves the external terminals221A exposed. Also, the second sealing resin 420A is provided in aposition slightly removed inwardly from the outer edge of the substrate100A in the y direction in plan view.

Exemplary materials of the first sealing resin 410A and the secondsealing resin 420A include epoxy resin, phenol resin, polyimide resin,polybenzoxazole (PBO) resin, and silicone resin. The first sealing resin410A and the second sealing resin 420A may be either translucent resinsor opaque resins, but in the present embodiment are preferably opaqueresins.

Next, a method for making the semiconductor device 1A will be describedbelow, with reference to FIGS. 51 to 71. Note that in these diagrams, across-section in an yz plane along a line XLVIII-XLVIII in FIG. 47 isshown.

First, a substrate material 100A′ is prepared as shown in FIG. 51. Thesubstrate material 100A′ is made of a single-crystal semiconductormaterial, and, in the present embodiment, is made of single-crystal Si.The substrate material 100A′ has a thickness of about 600 μm, forexample. The substrate material 100A′ is of a size that enables aplurality of substrates 100A of the abovementioned semiconductor device1A to be obtained. That is, the following manufacturing process ispremised on batch manufacturing a plurality of electronic devices A1.Although a method for making one electronic device A1 is possible, atechnique for batch manufacturing a plurality of electronic devices A1is more realistic when industrial efficiency is taken intoconsideration.

The substrate material 100A′ has a main surface 101A and a back surface102A that face in opposite directions to each other in the z direction.In the present embodiment, a surface having a crystal orientation of(100), that is, a (100) surface, is adopted as the main surface 101A.Next, a mask layer 191A made of SiO₂ is formed by oxidizing the mainsurface 101A. The mask layer 191A has a thickness of about 0.7 to 1.0μm, for example.

Next, as shown in FIG. 52, patterning is performed by etching, forexample, on the mask layer 191A. Stripe-shaped openings that each extendthe x direction and are spaced from each other in the y direction arethereby formed in the mask layer 191A. The shape and size of theseopenings are set according to the shape and size of the first recessedportion 110A that is to ultimately be obtained. Note that, in thediagram, a single cross-section of a plurality of stripe-shaped openingsis shown.

Next, as shown in FIG. 53, the first recessed portion 110A is formed.The first recessed portion 110A is formed by anisotropic etching usingKOH, for example. KOH is an example of alkali etching solution that canrealize favorable anisotropic etching on single-crystal Si. Byperforming this anisotropic etching, a first recessed portion 110Ahaving a first bottom surface 111A, two first sloping surfaces 112A, andtwo sloping surfaces (not shown) that connect end portions of the twofirst sloping surfaces 112A is formed. Alternatively, note that the twosloping surfaces need not be formed in the case where both ends of themask layer 191A in the x direction reach to both ends of substratematerial 100A′ in the x direction. The two first sloping surfaces 112Acorresponds to the long sides of the stripe-shaped openings that extendin the x direction, and are elongated in the x direction. The firstbottom surface 111A is also elongated in the x direction. The firstsloping surfaces 112A are at an angle of about 55 degrees relative tothe xy plane.

Next, as shown in FIG. 54, a mask layer 192A is formed by furtherpatterning performed on the mask layer 191A. The mask layer 192A has aplurality of stripe-shaped openings whose width in the y direction isgreater than the mask layer 191A, and the area of the openings isgreater than the mask layer 191A. The shape and size of these openingsare set according to the shape and size of the second recessed portion120A that is to ultimately be obtained.

Next, as shown in FIG. 55, a recessed portion 105A is formed. To formthe recessed portion 105A, abovementioned anisotropic etching using KOH,for example, is performed. As a result of this anisotropic etching, thefirst recessed portion 110A larger and deeper, and the second recessedportion 120A is newly formed. The second recessed portion 120A has asecond bottom surface 121A and two second sloping surfaces 122A. Notethat the second bottom surface 121A at this stage can take aconfiguration in which two second bottom surfaces 121A sandwich thefirst recessed portion 110A in the y direction. Alternatively, thesecond bottom surface 121A can be an elongated rectangular ring shapethat surrounds the first recessed portion 110A. The second slopingsurfaces 122A are at an angle of about 55 degrees with the xy plane,similarly to the first sloping surfaces 112A. Through undergoinganisotropic etching twice as described above, a two-stepped recessedportion 105A having a first recessed portion 110A and a second recessedportion 120A is formed. In the present embodiment, the first recessedportion 110A has a depth of about 400 μm, and the second recessedportion 120A has a depth of about 120 μm.

Next, as shown in FIG. 56, the mask layer 192A is removed. This removalis performed by etching using HF, for example. At this time, thesubstrate material 100A′ will be configured with a plurality of recessedportions 105A disposed in parallel to each other, as shown in FIG. 57.Note that, in this diagram, a portion of the substrate material 100A′ inthe x direction and the y direction is shown.

Next, as shown in FIG. 58, an insulating layer 104A made of SiO₂, forexample, is formed. The insulating layer 104A is formed by oxidizing theentire substrate material 100A′ on the opposite side to the back surface102A. An insulating layer 104A having a thickness of about 0.7 to 1.0 μmis thereby obtained.

Next, as shown in FIG. 59, a barrier/seed layer 201A is formed. Thebarrier/seed layer 201A is formed by sputtering, for example.Specifically, a layer made of Ti is formed by sputtering on theinsulating layer 104A. This layer made of Ti functions as a barrierlayer. Next, a layer made of Cu is formed by sputtering on the barrierlayer. This layer made of Cu functions as a seed layer. The barrier/seedlayer 201A is obtained by such sputtering.

Next, as shown in FIG. 60, a mask layer 291A is formed. The mask layer291A is formed by spray application of a photosensitive resist resin,for example.

Next, as shown in FIG. 61, the mask layer 291A is patterned. Thispatterning is performed by removing a desired portion through performingexposure and development using a photolithography technique, forexample, on the mask layer 291A. The shape of the mask layer 291Aobtained by this patterning corresponds to the shape of theabovementioned interconnect layer 200A. Note that a plurality ofexposures may be performed, while changing the focal depth of theexposure, in correspondence with the recessed portion 105A having agiven depth.

Next, as shown in FIG. 62, a plating layer 202A is formed. The platinglayer 202A is formed by electrolytic plating using the seed layer of thebarrier/seed layer 201A, for example. As a result, a plating layer 202Amade of Cu, for example, is obtained. The plating layer 202A has athickness of about 5 μm, for example. The plating layer 202A has theshape of the abovementioned interconnect layer 200A.

Next, as shown in FIG. 63, the mask layer 291A is removed.

Next, as shown in FIG. 64, the portion of the barrier/seed layers 201Aexposed from the plating layer 202A is removed. Removal of thebarrier/seed layer 201A is performed by wet etching, for example. Aninterconnect layer 200A consisting of the barrier/seed layer 201A andthe plating layer 202A that have both been patterned is therebyobtained.

Next, as shown in FIG. 65, the orientation sensor elements 311A, 312Aand 313A are mounted. Solder balls that will form the solder 351A areformed on the orientation sensor elements 311A, 312A and 313A. Also,flux is applied to these solder balls. The orientation sensor element311A is placed on the first bottom surface 111A, and the orientationsensor elements 312A and 313A are placed on the first sloping surfaces112A, utilizing the adhesiveness of this flux. Mounting of theorientation sensor elements 311A, 312A and 313A is completed by meltingthe solder balls in a reflow furnace and then setting the melted solder.Also, two capacitors 343A are mounted on the first bottom surface 111A.A plurality of sets of elements are similarly mounted in each recessedportion 105A at a uniform pitch in the x direction, with each set ofelements consisting of the orientation sensor elements 311A, 312A and313A and two capacitors 343A. Mounting of a plurality of sets ofelements for constituting a plurality of semiconductor devices 1A isthereby completed.

Next, as shown in FIG. 66, a first sealing resin 410A is formed. Thefirst sealing resin 410A is formed by mainly filling the first recessedportion 110A with a photosetting resin material that has excellentpermeability, for example, and setting the resin material. At this time,the orientation sensor elements 311A, 312A and 313A and the twocapacitors 343A are completely covered by this resin material. On theother hand, the second bottom surface pads 213A of the second bottomsurface 121A are reliably exposed. Note that exemplary materials forforming the first sealing resin 410A include epoxy resin, phenol resin,polyimide resin, polybenzoxazole (PBO) resin, and silicone resin. Thefirst sealing resin 410A may be either a translucent resin or an opaqueresin, but in the present embodiment is preferably an opaque resin.

Next, as shown in FIG. 67, an integrated circuit element 330A ismounted. Solder ball that will form the solder 351A are formed on theintegrated circuit element 330A. Also, flux is applied to these solderballs. The integrated circuit element 330A is placed on the secondbottom surface 121A utilizing the adhesiveness of this flux. Mounting ofthe integrated circuit element 330A is completed by melting the solderballs in a reflow furnace and then setting the melted solder.

Next, as shown in FIG. 68, a second sealing resin 420A is formed. Thesecond sealing resin 420A is formed by mainly filling the secondrecessed portion 120A with a photosetting resin material that hasexcellent permeability, for example, and setting the resin material. Atthis time, the integrated circuit element 330A is completely covered bythis resin material. On the other hand, a portion of plating layer 202Aon the main surface 101A is reliably exposed. Also, the second sealingresin 420A is formed so as to not overlap with a cutting area which willbe discussed later. Note that exemplary materials for forming the secondsealing resin 420A include epoxy resin, phenol resin, polyimide resin,polybenzoxazole (PBO) resin, and silicone resin. The second sealingresin 420A may be either a translucent resin or an opaque resin, but inthe present embodiment is preferably an opaque resin.

Next, as shown in FIG. 69, bumps that bulge in the z direction areformed on the external terminals 221A by electroless plating a metalsuch as Ni, Pd, and Au, for example.

Next, as shown in FIG. 70, the substrate material 100A′ is cut along aplurality of cutting lines CL, and the substrate material 100A′ isseparated into individual pieces. This cutting is performed such thatone of the abovementioned sets of elements is included in each piece.Also, the cutting lines CL extending in the x direction are preferablylocated within the main surface 101A exposed in stripes from the sealingresin 400A (second sealing resin 420A).

Cutting along the cutting lines CL is performed using a dicer Dc, asshown in FIG. 71. Note that when cutting along the cutting lines CLextending in the x direction, the dicer Dc cuts only the substratematerial 100A′ and the second sealing resin 420A is not cut. Throughundergoing this cutting, the semiconductor device 1A shown in FIGS. 46to 49 is obtained.

Next, the effects of the semiconductor device 1A and the method formaking the semiconductor device 1A will be described.

According to the present embodiment, the three orientation sensorelements 311A, 312A and 313A are accommodated in the first recessedportion 110A of the recessed portion 105A of the substrate 100A made ofa semiconductor material. For this reason, leads for supporting thethree orientation sensor elements 311A, 312A and 313A do not need to beprovided. Little cost is involved in reshaping the substrate 100A madeof a semiconductor material, as compared with the case where leads aremolded. Accordingly, the cost of the semiconductor device 1A can bereduced. In particular, in the case of producing the semiconductordevice 1B in small batches, the cost reduction effect is marked. As aresult of the recessed portion 105A having the opening portions 130A,the area of the first bottom surface 111A can be enlarged in the xdirection. This is suited to achieving the miniaturization of thesemiconductor device 1A, while disposing the orientation sensor element311A and the two capacitors 343A on the first bottom surface 111A. Inparticular, as a result of the recessed portion 105A having the twoopening portions 130A, the first bottom surface 111A reaches to bothends of the semiconductor device 1A in the x direction. Thisconfiguration is suited to miniaturization of the semiconductor device1A.

By forming the recessed portion 105A in a two-stepped shape with thefirst recessed portion 110A and the second recessed portion 120A, thefirst recessed portion 110A can be used as a space exclusively foraccommodating the orientation sensor elements 311A, 312A and 313A andthe two capacitors 343A.

As a result of the orientation sensor elements 312A and 313A beingsupported by the first sloping surfaces 112A, the magnetic cores 315Aand 316A defining the orientation detection axes of the orientationsensor elements 312A and 313A can be accurately set to a known angle.This is suited to performing 3-axis detection by the semiconductordevice 1A more accurately. As a result of the orientation sensor element311A being supported by the first bottom surface 111A, the magnetic core314A of the orientation sensor element 311A can be accurately installedat a different angle to the magnetic cores 315A and 316A of theorientation sensor elements 312A and 313A. Also, a positionalrelationship can be established in which the magnetic core 314A and themagnetic cores 315A and 316A are installed to form a comparatively largeangle. This is advantageous in improving the detection accuracy of thesemiconductor device 1A.

As a result of the orientation sensors 311A, 312A and 313A having theabovementioned sloping lateral surfaces, interference between theorientation sensors 311A, 312A and 313A that are adjacent to each othercan be avoided. Miniaturization of the semiconductor device 1A canthereby be attained.

As a result of the substrate 100A being made of a single-crystalsemiconductor material typified by Si, the first sloping surfaces 112Aand the second sloping surfaces 122A can be produced as surfaces thatslope accurately at a known predetermined angle relative to the firstbottom surface 111A and the second bottom surface 121A. In particular,as a result of the substrate 100A being made of Si and a (100) surfacebeing adopted as the main surface 101A, the angle of the four firstsloping surfaces 112A and the four second sloping surfaces 122A relativeto the first bottom surface 111A and the second bottom surface 121A canbe set to about 55 degrees. The semiconductor device 1A can thereby beconfigured to have a balanced shape.

As a result of the integrated circuit element 330A being supported bythe second bottom surface 121A and partially overlapping with the firstrecessed portion 110A in plan view, the orientation sensor elements311A, 312A and 313A and the integrated circuit element 330A can bedisposed three-dimensionally in the z direction. Miniaturization of thesemiconductor device 1A can thereby be balanced with higherfunctionality.

As a result of the integrated circuit element 330A being supported by atleast two regions of the second bottom surface 121A that sandwich thefirst recessed portion 110A, the integrated circuit element 330A can bestably supported.

As a result of the external terminals 221A being formed on the mainsurface 101A, the semiconductor device 1A can be surface mounted, withthe external terminal 221A side (main surface 101A side) as the mountingside.

As a result of the second bottom surface pads 213A being formed on thesecond bottom surface 121A, the integrated circuit element 330A can beappropriately mounted on the second bottom surface 121A.

As a result of the first bottom surface pads 211A being formed on thefirst bottom surface 111A, the orientation sensor element 311A can bereliably mounted at an attitude along the first bottom surface 111A. Asa result of the first sloping surface pads 212A being formed on thefirst sloping surfaces 112A, the orientation sensor elements 312A and313A can be reliably mounted at an attitude along the first slopingsurfaces 112A.

As a result of the interconnect layer 200A having the connection paths231A, 234A, 235A and 236A, the external terminals 221A, the secondbottom surface pads 213A, the first bottom surface pads 211A and thefirst sloping surface pads 212A can be reliably electrically connectedto each other as desired. As a result of the connection path 231Apassing via the second sloping surfaces 122A, the external terminals221A and the second bottom surface pads 213A formed on thethree-dimensionally shaped substrate 100A can be appropriatelyelectrically connected, with little possibility of disconnection or thelike. Also, as a result of the connection paths 234A, 235A and 236Apassing via the first sloping surfaces 112A, there is little possibilityof disconnection or the like.

As a result of the three orientation sensor elements 311A, 312A and 313Aand the two capacitors 343A being covered with the sealing resin 400A,these orientation sensor elements 311A, 312A and 313A and the twocapacitors 343A can be appropriately protected. As a result ofconfiguring the sealing resin 400A from the first sealing resin 410A andthe second sealing resin 420A, the two-stepped recessed portion 105Aconsisting of the first recessed portion 110A and the second recessedportion 120A can be appropriately filled.

As a result of the first sealing resin 410A being configured to mainlyfill the first recessed portion 110A, the three orientation sensorelements 311A, 312A and 313A and the two capacitors 343A can beappropriately covered before the integrated circuit element 330A ismounted. Also, as a result of the integrated circuit element 330A beingcovered by the second sealing resin 420A, the sealing resin 400A can beformed so that unintended gaps between the integrated circuit element330A and the three orientation sensor elements 311A, 312A and 313A andthe two capacitors 343A do not occur. As a result of the second sealingresin 420A leaving the external terminals 221A exposed, thesemiconductor device 1A can be easily surface mounted, and theintegrated circuit element 330A, the three orientation sensor elements311A, 312A and 313A or the two capacitors 343A being wronglyelectrically connected to a circuit board, for example, on which thesemiconductor device 1A is mounted can be avoided.

FIGS. 72 to 74 show a semiconductor device based on the secondembodiment of the present invention. A semiconductor device 1B of thepresent embodiment is provided with a substrate 100B, an interconnectlayer 200B, three orientation sensor elements 311B, 312B and 313B, anintegrated circuit element 330B, two capacitors 343B, and a sealingresin 400B. Note that, in FIG. 72, the sealing resin 400B is omitted,and the three orientation sensor elements 311B, 312B and 313B, theintegrated circuit element 330B and the two capacitors 343B areindicated with imaginary outlines. FIG. 73 is a cross-sectional view inan yz plane along a line LXXIII-LXXIII in FIG. 72, and FIG. 74 is across-sectional view in a zx plane along a line LXXIV-LXXIV in FIG. 72.

The semiconductor device 1B is configured as a surface-mountedorientation detection module that is capable of detecting orientation inthree directions using a configuration that will be described below. Togive an example of the size of the semiconductor device 1B, thesemiconductor device 1B has a size of about 1.5 mm×2.5 mm in plan viewand a thickness of about 0.6 mm.

The substrate 100B forms a base of the semiconductor device 1B, andconsists of a base 103B and an insulating layer 104B. The substrate 100Bhas a main surface 101B, a back surface 102B, a pair of lateral surfaces106B, and a recessed portion 105B. The substrate 100B has a thickness ofabout 600 μm, for example. Note that, in the present embodiment, themain surface 101B and the back surface 102B face in opposite directionsto each other in the z direction, and the z direction corresponds to thethickness direction of the semiconductor device 1B. Also, the xdirection and the y direction are both at a right angle to the zdirection. The pair of lateral surfaces 106B are both connected to themain surface 101B, and face in opposite directions to each other in thex direction.

The base 103B is made of a single-crystal semiconductor material, and inthe present embodiment is made of single-crystal Si. Also, theinsulating layer 104B, in the present embodiment, is made of SiO₂. Notethat the material of the base 103B is not limited to Si, and need onlybe a material that enables a recessed portion 105B that meets intentionswhich will be discussed later to be formed. The insulating layer 104Bpartially covers the base 103B that faces out from the opposite side tothe back surface 102B. The insulating layer 104B has a thickness ofabout 0.1 to 1.0 μm, for example.

In the present embodiment, the (100) surface of the base 103B is adoptedas the main surface 101B. The recessed portion 105B is recessed towardthe back surface 102B from the main surface 101B. The recessed portion105B has a pair of opening portions 130B that open on the pair oflateral surfaces 106B. Note that to favorably achieve the effectsintended by the present application which will be discussed later, therecessed portion 105B preferably has a pair of opening portions 130B,but the present application it not limited thereto and may be configuredto have only one of the opening portions 130B. Also, the cross-sectionalshape of the recessed portion 105B in the yx plane is constant. In thepresent embodiment, the recessed portion 105B consists of a firstrecessed portion 110B and a second recessed portion 120B. The firstrecessed portion 110B is located on the back surface 102B side, and hasa first bottom surface 111B and two first sloping surfaces 112B. Thesecond recessed portion 120B is located closer to the main surface 101Bthan is the first recessed portion 110B, and has two second bottomsurfaces 121B and two second sloping surfaces 122B. The first recessedportion 110B and the second recessed portion 120B have shapes that aredependent on having adopted the (100) surface as the main surface 101B.

As a result on the recessed portion 105B being formed, the main surface101B consists of two regions that are spaced in the y direction.

The first recessed portion 110B has a rectangular shape in plan view.The first recessed portion 110B has a depth of about 400 μm, forexample. The first bottom surface 111B has a rectangular shape in planview. The two first sloping surfaces 112B sandwich the first bottomsurface 111B in plan view, and have rectangular shapes that aresubstantially congruent with each other. Each first sloping surface 112Bslopes relative to the first bottom surface 111B. In the presentembodiment, the first sloping surfaces 112B are at an angle of about 55degrees relative to the xy plane. Note that the fact that the firstsloping surfaces 112B have substantially trapezoidal shapes that aresubstantially congruent with each other and the angle is 55 degrees aredependent on having adopted the (100) surface as the main surface 101B.

The second recessed portion 120B has a rectangular shape in plan view.The second recessed portion 120B has a depth of about 120 μm, forexample. The two second bottom surfaces 121B have rectangular shapes inplan view, and sandwich the first recessed portion 110B. Also, eachsecond bottom surface 121B is connected to a first sloping surface 112B.The two second sloping surfaces 122B surround the two second bottomsurfaces 121B and the first recessed portion 110B in plan view, and havesubstantially rectangular shapes. The second sloping surfaces 122B sloperelative to the second bottom surfaces 121B. In the present embodiment,the second sloping surfaces 122B are at an angle of about 55 degreesrelative to the xy plane. Note that the fact that the second slopingsurfaces 122B have a substantially trapezoidal shape and the angle is 55degrees is dependent on having adopted the (100) surface as the mainsurface 101B.

The interconnect layer 200B is for mounting the three orientation sensorelements 311B, 312B and 313B, the integrated circuit element 330B andthe two capacitors 343B, and is for constituting a current path betweenthese parts. The interconnect layer 200B is formed on the insulatinglayer 104B, and, in the present embodiment, has a structure in which abarrier/seed layer 201B and a plating layer 202B are stacked.

The barrier/seed layer 201B is a base layer for forming a desiredplating layer 202B, and is formed on the insulating layer 104B. Thebarrier/seed layer 201B consists of, for example, a Ti layer serving asa barrier layer and a Cu layer serving as a seed layer stacked on thebarrier layer that are formed on the insulating layer 104B. Thebarrier/seed layer 201B is formed by sputtering, for example.

The plating layer 202B is made of Cu, for example, and is formed byelectrolytic plating that utilizes the barrier/seed layer 201B. Theplating layer 202B has a thickness of about 5 μm, for example.

In the present embodiment, the interconnect layer 200B has a firstbottom surface pad 211B, a first sloping surface pad 212B, a secondbottom surface pad 213B, an external terminal 222B, and connection paths234B, 235B and 236B.

The first bottom surface pad 211B is formed on the first bottom surface111B of the first recessed portion 110B, and has a rectangular shape,for example. In the present embodiment, six first bottom surface pads211B are formed. In the present embodiment, the first bottom surfacepads 211B are used in order to mount the orientation sensor element 311Band the two capacitors 343B.

The first sloping surface pad 212B is formed on two first slopingsurfaces 112B of the first recessed portion 110B, and has a rectangularshape, for example. In the present embodiment, two first slopingsurfaces pads 212B are formed on each of the two first sloping surfaces112B disposed sandwiching the first bottom surface 111B with a spacetherebetween in they direction. The two first sloping surfaces pads 212Bof each first sloping surface 112B are disposed side-by-side in the xdirection. In the present embodiment, the first sloping surface pads212B are used in order to mount the orientation sensor elements 312B and313B.

The second bottom surface pad 213B is formed on the two second bottomsurfaces 121B of the second recessed portion 120B, and has a rectangularshape, for example. In the present embodiment, on each second bottomsurface 121B, eight second bottom surface pads 213B are arrayed in the xdirection, and the two second bottom surface pads 213B are disposed witha space therebetween in the x direction. In the present embodiment, thesecond bottom surface pads 213B are used in order to mount theintegrated circuit element 330B.

The external terminal 222B is formed on the main surface 101B, and isused in order to surface mount the semiconductor device 1B to thecircuit board of an electronic apparatus, for example. The externalterminal 222B is configured to have a structure in which a bump obtainedby further electroless plating a metal such as Ni, Pd or Au, forexample, is formed on the abovementioned barrier/seed layer 201B andplating layer 202B. As shown in FIG. 73, the external terminal 222B isthereby formed to budge in the z direction. In order to electricallyconnect the first bottom surface pad 211B, the first sloping surface pad212B and the second bottom surface pad 213B to the external terminal222B, the semiconductor device 1B has a plurality of through hole paths240B. Each through hole path 240B passes through the substrate 100B fromthe second bottom surface 121B to the back surface 102B, and is made ofCu similarly to the plating layer 202B, for example. The through holepaths 240B may be formed at same time with a similar technique to thetechnique for forming the plating layer 202B. As a result of a pluralityof external terminals 222B being provided, the back surface 102B side ofthe semiconductor device 1B is formed as a mounting surface.

The connection paths 234B, 235B and 236B are for constituting paths thatelectrically connect the first bottom surface pads 211B, the firstsloping surface pads 212B, the second bottom surface pads 213B and theexternal terminals 222B to each other.

The connection paths 234B constitute paths from the second bottomsurfaces 121B to the first sloping surfaces 112B, and electricallyconnect the second bottom surface pads 213B to the first sloping surfacepads 212B. In the present embodiment, some of the connection paths 234Bextend linearly in the y direction in plan view. Also, other connectionpaths 234B are in a bent state on the first sloping surfaces 112B.

The connection paths 235B constitute paths that reach to the firstbottom surface 111B from the second bottom surfaces 121B via the firstsloping surfaces 112B, and electrically connect the second bottomsurface pads 213B to the first bottom surface pads 211B. In the presentembodiment, some of the connection paths 235B extend linearly in the ydirection in plan view. Also, other connection paths 235B are in a bentstate on one of the second bottom surfaces 121B, the first slopingsurfaces 112B and the first bottom surface 111B.

The connection paths 236B constitute the paths from the first slopingsurfaces 112B to the first bottom surface 111B, and electrically connectthe first sloping surface pads 212B to the first bottom surface pads211B. In the present embodiment, the connection paths 236B extend fromone first sloping surface pad 212B to a plurality of first bottomsurface pads 211B. Also, the connection paths 236B are in a bent stateon the first bottom surface 111B.

Note that, in the present embodiment, the second bottom surface pad 213Bthat is located third from the left in the upper portion of FIG. 72 isconnected to ground. Also, the external terminal 222B, the connectionpaths 234B, the first sloping surface pads 212B, the connection paths236B, and the first bottom surface pads 211B that are electricallyconnected to this second bottom surface pad 213B are connected toground.

The three orientation sensor elements 311B, 312B and 313B have detectionreference axes that extend in different directions to each other, andare used in order to detect the attitude of the semiconductor device 1Brelative to geomagnetism, for example. In the present embodiment, theorientation sensor elements 311B, 312B and 313B have magnetic cores314B, 315B and 316B, as shown in FIG. 72. The magnetic cores 314B, 315Band 316B are metal rod-like members that extend in predetermineddirections, and the longitudinal directions thereof correspond to thedetection reference axes of the orientation sensor elements 311B, 312Band 313B. The orientation sensor elements 311B, 312B and 313B furtherhave coils (not shown) formed so as to surround the magnetic cores 314B,315B and 316B. The orientation sensor elements 311B, 312B and 313B havea thickness of about 80 μm, for example.

In the present embodiment, the orientation sensor element 311B issupported by the first bottom surface 111B, and is mounted via solder351B using three first bottom surface pads 211B. As a result of thisform of mounting, the magnetic core 314B of the orientation sensorelement 311B extends in the x direction.

The orientation sensor element 312B is supported by the first slopingsurface 112B in the upper portion of FIG. 72, and is mounted via solder351B using three first sloping surface pads 212B. As a result of thisform of mounting, the magnetic core 315B of the orientation sensorelement 312B is at a right angle to the x direction, and extends in adirection that is included in an yz plane. This direction is parallel tothe first sloping surface 112B that supports the orientation sensorelement 312B.

The orientation sensor element 313B is supported by the first slopingsurface 112B in the lower portion of FIG. 72, and is mounted via solder351B using three first sloping surface pads 212B. As a result of thisform of mounting, the magnetic core 316B of the orientation sensorelement 313B is at a right angle to the x direction, and extends in adirection that is included in an yz plane. This direction is parallel tothe first sloping surface 112B that supports the orientation sensorelement 313B.

Also, in the present embodiment, the orientation sensors 311B, 312B and313B have a top surface located on an opposite side to a bottom surfaceon the substrate 100B side that is smaller than the bottom surface.Also, the lateral surfaces connecting the bottom surface and the topsurface slope relative to a direction in which the bottom surface andthe top surface are spaced from each other.

The integrated circuit element 330B is for controlling orientationdetection processing that uses the three orientation sensor elements311B, 312B and 313B. In the present embodiment, the integrated circuitelement 330B is constituted as an ASIC (application-specific integratedcircuit) element and has a thickness of about 80 to 100 μm.

The integrated circuit element 330B is supported by the second bottomsurfaces 121B, and is mounted via solder 351B utilizing the secondbottom surface pads 213B. As shown in FIG. 72, the integrated circuitelement 330B is in a state of being supported on two sides, as a resultof being mounted using a plurality of second bottom surface pads 213Bdisposed with a space therebetween in the y direction. Also, theintegrated circuit element 330B covers most of the first recessedportion 110B except for a portion thereof in plan view. Also, theintegrated circuit element 330B, in plan view, entirely overlaps withthe orientation sensor elements 311B and 312B, and partially overlapswith the orientation sensor element 313B. Also, the integrated circuitelement 330B also overlaps with the two capacitors 343B. As shown inFIGS. 73 and 74, a portion of the integrated circuit element 330B iscontained within the second recessed portion 120B in the z direction.

Direction detection processing by the integrated circuit element 330Busing the orientation sensor elements 311B, 312B and 313B is performedas follows, for example. As described above, the orientation sensorelements 311B, 312B and 313B have magnetic cores 314B, 315B and 316Bthat are each surrounded by a coil. As a result of the orientationsensor elements 311B, 312B and 313B being mounted in the abovementionedform, the orientation sensor elements 311B, 312B and 313B, that is, themagnetic cores 314B, 315B and 316B, extend in different directions toeach other. The directions in which these magnetic cores 314B, 315B and316B extend are stored as known information in the integrated circuitelement 330B.

The two capacitors 343B are disposed on the first bottom surface 111B,and are disposed sandwiching the orientation sensor element 311B with aspace therebetween in the x direction. The two capacitors 343B and theorientation sensor element 311B are thereby disposed side-by-side in thex direction.

The semiconductor device 1B is able to three dimensionally detect theattitude of the semiconductor device 1B relative to geomagnetism, byusing the orientation sensor elements 311B, 312B and 313B based on atechnique disclosed in JP-A-2006-47267, for example (3-axis detection).The integrated circuit element 330B outputs the orientation detectionresult of the semiconductor device 1B as a signal, in response to anexternal instruction from the external terminals 222B or autonomously.

The sealing resin 400B completely covers the orientation sensor elements311B, 312B and 313B and the two capacitors 343B, partially covers theintegrated circuit element 330B, and fills the recessed portion 105B. Inthe present embodiment, the sealing resin 400B consists of a firstsealing resin 410B and a second sealing resin 420B. Both end faces ofthe sealing resin 400B in the x direction are exposed from the substrate100B. Also, both end faces of the sealing resin 400B in the x directionare flush with the two lateral surfaces 106B of the substrate 100B.

The first sealing resin 410B largely fills the first recessed portion110B, and completely covers the orientation sensor elements 311B, 312Band 313B and the two capacitors 343B. On the other hand, the firstsealing resin 410B does not cover the second bottom surface pads 213B orthe integrated circuit element 330B.

The second sealing resin 420B largely fills the second recessed portion120B, and partially covers the integrated circuit element 330B. Theupper surface of the integrated circuit element 330B is thereby exposedfrom the second sealing resin 420B (sealing resin 400B). Also, thesecond sealing resin 420B is provided in a position slightly removedinwardly from the outer edge of the substrate 100B in the y direction inplan view.

Exemplary materials of the first sealing resin 410B and the secondsealing resin 420B include epoxy resin, phenol resin, polyimide resin,polybenzoxazole (PBO) resin, and silicone resin. The first sealing resin410B and the second sealing resin 420B may be either translucent resinsor opaque resins, but in the present embodiment are preferably opaqueresins.

Next, the effects of the semiconductor device 1B will be described.

According to the present embodiment, the three orientation sensorelements 311B, 312B and 313B are accommodated in the first recessedportion 110B of the recessed portion 105B of the substrate 100B made ofa semiconductor material. For this reason, leads for supporting thethree orientation sensor elements 311B, 312B and 313B do not need to beprovided. Little cost is involved in reshaping the substrate 100B madeof a semiconductor material, as compared with the case where leads aremolded. Accordingly, the cost of the semiconductor device 1B can bereduced. In particular, in the case of producing the semiconductordevice 1B in small batches, the cost reduction effect is marked. As aresult of the recessed portion 105B having the opening portions 130B,the area of the first bottom surface 111B can be enlarged in the xdirection. This is suited to achieving the miniaturization of thesemiconductor device 1B, while disposing the orientation sensor element311B and the two capacitors 343B on the first bottom surface 111B. Inparticular, as a result of the recessed portion 105B having the twoopening portions 130B, the first bottom surface 111B reaches to bothends of the semiconductor device 1B in the x direction. Thisconfiguration is suited to miniaturization of the semiconductor device1B.

By forming the recessed portion 105B in a two-stepped shape with thefirst recessed portion 110B and the second recessed portion 120B, thefirst recessed portion 110B can be used as a space exclusively foraccommodating the orientation sensor elements 311B, 312B and 313B andthe two capacitors 343B.

As a result of the orientation sensor elements 312B and 313B beingsupported by the first sloping surfaces 112B, the magnetic cores 315Band 316B defining the orientation detection axes of the orientationsensor elements 312B and 313B can be accurately set to a known angle.This is suited to performing 3-axis detection by the semiconductordevice 1B more accurately. As a result of the orientation sensor element311B being supported by the first bottom surface 111B, the magnetic core314B of the orientation sensor element 311B can be accurately installedat a different angle to the magnetic cores 315B and 316B of theorientation sensor elements 312B and 313B. Also, a positionalrelationship can be established in which the magnetic core 314B and themagnetic cores 315B and 316B installed to form a comparatively largeangle. This is advantageous in improving the detection accuracy of thesemiconductor device 1B.

As a result of the orientation sensors 311B, 312B and 313B having theabovementioned sloping lateral surfaces, interference between theorientation sensors 311B, 312B and 313B that are adjacent to each othercan be avoided. Miniaturization of the semiconductor device 1B canthereby be attained.

As a result of the substrate 100B being made of a single-crystalsemiconductor material typified by Si, the first sloping surfaces 112Band the second sloping surfaces 122B can be produced as surfaces thatslope accurately at a known predetermined angle relative to the firstbottom surface 111B and the second bottom surface 121B. In particular,as a result of the substrate 100B being made of Si and a (100) surfacebeing adopted as the main surface 101B, the angle of the four firstsloping surfaces 112B and the four second sloping surfaces 122B relativeto the first bottom surface 111B and the second bottom surface 121B canbe set to about 55 degrees. The semiconductor device 1B can thereby beconfigured to have a balanced shape.

As a result of the integrated circuit element 330B being supported bythe second bottom surface 121B and partially overlapping with the firstrecessed portion 110B in plan view, the orientation sensor elements311B, 312B and 313B and the integrated circuit element 330B can bedisposed three-dimensionally in the z direction. Miniaturization of thesemiconductor device 1B can thereby be balanced with higherfunctionality.

As a result of the integrated circuit element 330B being supported by atleast two regions of the second bottom surface 121B that sandwich thefirst recessed portion 110B, the integrated circuit element 330B can bestably supported.

As a result of the external terminals 222B being formed on the backsurface 102B, the semiconductor device 1B can be surface mounted, withthe external terminal 222B side (back surface 102B side) as the mountingside.

As a result of the second bottom surface pads 213B being formed on thesecond bottom surface 121B, the integrated circuit element 330B can beappropriately mounted on the second bottom surface 121B.

As a result of the first bottom surface pads 211B being formed on thefirst bottom surface 111B, the orientation sensor element 311B can bereliably mounted at an attitude along the first bottom surface 111B. Asa result of the first sloping surface pads 212B being formed on thefirst sloping surfaces 112B, the orientation sensor elements 312B and313B can be reliably mounted at an attitude along the first slopingsurfaces 112B.

As a result of the interconnect layer 200B having the connection paths234B, 235B and 236B and the through hole paths 240B, the externalterminals 222B, the second bottom surface pads 213B, the first bottomsurface pads 211B and the first sloping surface pads 212B can bereliably electrically connected to each other as desired. As a result ofthe connection paths 234B, 235B and 236B passing via the first slopingsurfaces 112B, there is little possibility of disconnection or the like.

As a result of the three orientation sensor elements 311B, 312B and 313Band the two capacitors 343B being covered with the sealing resin 400B,these orientation sensor elements 311B, 312B and 313B and the twocapacitors 343B can be appropriately protected. As a result ofconfiguring the sealing resin 400B from the first sealing resin 410B andthe second sealing resin 420B, the two-stepped recessed portion 105Bconsisting of the first recessed portion 110B and the second recessedportion 120B can be appropriately filled.

As a result of the first sealing resin 410B being configured to mainlyfill the first recessed portion 110B, the three orientation sensorelements 311B, 312B and 313B and the two capacitors 343B can beappropriately covered before the integrated circuit element 330B ismounted. Also, as a result of the integrated circuit element 330B beingpartially covered by the second sealing resin 420B, the sealing resin400B can be formed so that unintended gaps between the integratedcircuit element 330B and the three orientation sensor elements 311B,312B and 313B and the two capacitors 343B do not occur.

The semiconductor device and the method for making the semiconductordevice according to the present invention are not limited to theabovementioned embodiments. Design changes can be freely made to thespecific configurations of the semiconductor device and the method formaking the semiconductor device according to the present invention.

Configurations of the present invention and variations thereof areenumerated below as Appendixes.

Appendix 1A

An electronic device including:

a substrate that has a main surface and a back surface that face inopposite directions to each other, and is made of a semiconductormaterial; and

a first electronic element disposed on the substrate;

a conductive layer that is electrically connected to the firstelectronic element,

wherein a through hole that passes through a portion of the substrate isformed in the substrate, and the through hole has a through hole innersurface, and

the conductive layer is formed from a region on the main surface side ofthe through hole inner surface to a region on the back surface side ofthe through hole inner surface.

Appendix 2A

The electronic device according to Appendix 1A,

wherein a recessed portion for element disposition that is recessed fromthe main surface is formed in the substrate, and

the first electronic element is disposed in the recessed portion forelement disposition.

Appendix 3A

The electronic device according to Appendix 2A, wherein the recessedportion for element disposition has a depth of 100 to 300 μm.

Appendix 4A

The electronic device according to Appendix 2A or 3A,

wherein the recessed portion for element disposition has a recessedportion bottom surface for element disposition that faces in a firstthickness direction that is one thickness direction of the substrate,and a recessed portion lateral surface for element disposition thatstands up from the recessed portion bottom surface for elementdisposition, and

the first electronic element is disposed on the recessed portion bottomsurface for element disposition.

Appendix 5A

The electronic device according to Appendix 4A, wherein the recessedportion bottom surface for element disposition is orthogonal to thethickness direction.

Appendix 6A

The electronic device according to Appendix 4A or 5A,

wherein the recessed portion bottom surface for element dispositionincludes two band-like surfaces that extends in one direction as viewedin the thickness direction, and

the first electronic element is disposed on the two band-like surfaces.

Appendix 7A

The electronic device according to Appendix 6A,

wherein the recessed portion bottom surface for element disposition hasa connecting surface that connects the two band-like surfaces as viewedin the thickness direction, and

the connecting surface extends in a direction that intersects thedirection in which each of the two band-like surfaces extend.

Appendix 8A

The electronic device according any of Appendixes 4A to 7A, wherein therecessed portion lateral surface for element disposition is connected tothe recessed portion bottom surface for element disposition.

Appendix 9A

The electronic device according to any of Appendixes 4A to 8A, whereinthe recessed portion lateral surface for element disposition slopesrelative to the thickness direction.

Appendix 10A

The electronic device according to Appendix 9A, wherein the recessedportion lateral surface for element disposition is at an angle of 55degrees relative to a plane that is orthogonal to the thicknessdirection.

Appendix 11A

The electronic device according to any of Appendixes 4A to 10A, whereinthe recessed portion lateral surface for element disposition isconnected to the main surface.

Appendix 12A

The electronic device according to Appendix 4A, wherein the conductivelayer is formed on the recessed portion lateral surface for elementdisposition.

Appendix 13A

The electronic device according to Appendix 12A, wherein the conductivelayer includes a plurality of main surface side interconnects, and theplurality of main surface side interconnects are insulated from eachother and formed on the recessed portion lateral surface for elementdisposition.

Appendix 14A

The electronic device according to Appendix 12A or 13A, furtherincluding:

a bottom surface electrode pad formed on the recessed portion bottomsurface for element disposition,

wherein the bottom surface electrode pad is electrically connected tothe first electronic element, and is interposed between the firstelectronic element and the conductive layer.

Appendix 15A

The electronic device according to Appendix 2A, wherein a recessedportion for interconnects is formed on the substrate, and the recessedportion for interconnects communicates with the through hole.

Appendix 16A

The electronic device according to Appendix 15A, wherein the recessedportion for interconnects has a region that overlaps with the firstelectronic element as viewed in the thickness direction of thesubstrate.

Appendix 17A

The electronic device according to Appendix 15A or 16A, wherein therecessed portion for interconnects entirely overlaps with the recessedportion for element disposition as viewed in the thickness direction.

Appendix 18A

The electronic device according to any of Appendixes 15A to 17A, whereinthe recessed portion for interconnects has a depth of is 250 to 350 μm.

Appendix 19A

The electronic device according to any of Appendixes 15A to 18A, whereinthere are a plurality of the recessed portion for interconnects.

Appendix 20A

The electronic device according to Appendix 15A, wherein the recessedportion for interconnects has a recessed portion lateral surface forinterconnects, and the recessed portion lateral surface forinterconnects is connected to the through hole inner surface.

Appendix 21A

The electronic device according to Appendix 20A, wherein the recessedportion lateral surface for interconnects slopes relative to thethickness direction.

Appendix 22A

The electronic device according to Appendix 21A, wherein the recessedportion lateral surface for interconnects is at an angle of 55 degreesrelative to a plane that is orthogonal to the thickness direction.

Appendix 23A

The electronic device according to Appendix 20A, wherein the conductivelayer is formed on the recessed portion lateral surface forinterconnects.

Appendix 24A

The electronic device according to Appendix 23A, wherein the conductivelayer includes a plurality of main surface side interconnects, and theplurality of main surface side interconnects are insulated from eachother and formed on the recessed portion lateral surface forinterconnects.

Appendix 25A

The electronic device according to Appendix 24A, wherein the mainsurface side interconnects have a region that is located closer to acenter of the through hole than is a portion of the conductive layerformed on the through hole inner surface, as viewed in the depthdirection of the through hole.

Appendix 26A

The electronic device according to any of Appendixes 1A to 25A, whereinthe through hole has a depth of 10 to 50 μm.

Appendix 27A

The electronic device according to any of Appendixes 1A to 26A, whereina ratio of the depth of the through hole to a maximum opening size ofthe through hole as viewed in the thickness direction of the substrateis 0.2 to 5.

Appendix 28A

The electronic device according to any of Appendixes 1A to 27A, whereinthere are a plurality of the through hole.

Appendix 29A

The electronic device according to any of Appendixes 1A to 28A, whereinthe through hole inner surface extends in the thickness direction of thesubstrate.

Appendix 30A

The electronic device according to Appendix 1A, wherein the conductivelayer includes a plurality of back surface side interconnects, and theplurality of back surface side interconnects are insulated from eachother and formed on the through hole inner surface.

Appendix 31A

The electronic device according to any of Appendixes 1A to 30A, whereinthe substrate has a thickness of 200 to 550 μm.

Appendix 32A

The electronic device according to any of Appendixes 1A to 31A, whereinthe substrate is made of single-crystal semiconductor material.

Appendix 33A

The electronic device according to any of Appendixes 1A to 32A, whereinthe semiconductor material is Si.

Appendix 34A

The electronic devices according to any of Appendixes 1A to 33A, whereinthe main surface and the back surface are orthogonal to the thicknessdirection of the substrate and flat.

Appendix 35A

The electronic device according to any of Appendixes 1A to 34A, whereinthe main surface is a (100) surface.

Appendix 36A

The electronic device according to Appendix 1A,

wherein the substrate has a first lateral surface, a second lateralsurface, a third lateral surface, and a fourth lateral surface,

the first lateral surface, the second lateral surface, the third lateralsurface and the fourth lateral surface all face in a direction that isorthogonal to the thickness direction of the substrate, and

the first lateral surface and the second lateral surface, the secondlateral surface and the third lateral surface, the third lateral surfaceand the fourth lateral surface, and the fourth lateral surface and thefirst lateral surface are respectively connected to each other.

Appendix 37A

The electronic device according to Appendix 1A, further provided with aninsulating layer formed on the substrate,

wherein the insulating layer is interposed between the conductive layerand the substrate.

Appendix 38A

The electronic device according to Appendix 37A, wherein the insulatinglayer is made of SiO₂ or SiN.

Appendix 39A

The electronic device according to Appendix 37A, wherein the insulatinglayer includes a main surface side insulating part, and at least aportion of the main surface side insulating part is formed on the mainsurface of the substrate.

Appendix 40A

The electronic device according to Appendix 39A, wherein the mainsurface side insulating part is formed by thermal oxidation.

Appendix 41A

The electronic device according to Appendix 37A, wherein the insulatinglayer includes a hole inner surface insulating part, the hole innersurface insulating part is formed on the through hole inner surface.

Appendix 42A

The electronic device according to Appendix 41A, wherein the hole innersurface insulating part is formed by CVD.

Appendix 43A

The electronic device according to Appendix 37A, wherein the insulatinglayer includes a back surface side insulating part, and at least aportion of the back surface side insulating part is formed on the backsurface of the substrate.

Appendix 44A

The electronic device according to Appendix 43A, wherein the backsurface side insulating part is formed by thermal oxidation.

Appendix 45A

The electronic device according to Appendix 1A, wherein the conductivelayer includes a seed layer and a plating layer, and the seed layer isinterposed between the substrate and the plating layer.

Appendix 46A

The electronic device according to Appendix 45A, wherein the seed layerhas a thickness of less than or equal to 1 μm, and the plating layer hasa thickness of 3 to 10 μm.

Appendix 47A

The electronic device according to Appendix 46A, wherein the seed layeris made of Cu, and the plating layer is made of Cu.

Appendix 48A

The electronic device according to any of Appendixes 1A to 47A, furtherincluding a main surface side insulating film that is at least partiallyformed on the main surface,

wherein the conductive layer is interposed between the main surface sideinsulating film and the substrate.

Appendix 49A

The electronic device according to Appendix 48A, further provided with aback surface side insulating film that is at least partially formed onthe back surface,

wherein the back surface side insulating film has a region formed insidethe through hole, and

the conductive layer is interposed between the back surface sideinsulating film and the substrate.

Appendix 50A

The electronic device according to Appendix 49A, wherein the mainsurface side insulating film and the back surface side insulating filmare made of SiN.

Appendix 51A

The electronic device according to Appendix 49A or 50A, wherein the mainsurface side insulating film and the back surface side insulating filmare formed by CVD.

Appendix 52A

The electronic device according to Appendix 2A, further including a mainsurface electrode pad formed on the main surface,

wherein the main surface electrode pad contacts the conductive layer,and is electrically connected to the first electronic element.

Appendix 53A

The electronic device according to Appendix 1A, further including a backsurface electrode pad formed on the back surface,

wherein the back surface electrode pad contacts the conductive layer,and is electrically connected to the first electronic element.

Appendix 54A

The electronic device according to Appendix 52A, further including asealing resin part that fills the recessed portion for elementdisposition, and covers the first electronic element.

Appendix 55A

The electronic device according to Appendix 54A, wherein the sealingresin part leaves the main surface electrode pad exposed.

Appendix 56A

The electronic device according to Appendix 1A, further including asecond electronic element and a third electronic element that aredisposed on the back surface side.

Appendix 57A

The electronic device according to Appendix 56A, wherein firstelectronic element is an integrated circuit element, the secondelectronic element is an inductor, and the third electronic element is acapacitor.

Appendix 58A

The electronic device according to Appendix 56A, wherein the secondelectronic element and the third electronic element each have a size inthe thickness direction of the substrate of 400 to 600 μm.

Appendix 59A

An electronic device unit including a plurality of the electronic deviceaccording to Appendix 1A, wherein the plurality of electronic devicesare stacked one on another.

Appendix 60A

The electronic device unit according to Appendix 59A, wherein theplurality of electronic devices are joined to each other via aconductive junction element.

Appendix 1B

An electronic device including:

a substrate having a main surface and a back surface that face inopposite directions to each other, and is made of a semiconductormaterial;

a first electronic element and an additional first electronic elementthat are disposed on the substrate and are stacked one on another;

a conductive layer that is electrically connected to the firstelectronic element,

wherein a through hole that passes through a portion of the substrate isformed in the substrate, and the through hole has a through hole innersurface, and

the conductive layer is formed from a region on the main surface side ofthe through hole inner surface to a region on the back surface side ofthe through hole inner surface.

Appendix 2B

The electronic device according to Appendix 1B, wherein a recessedportion for element disposition that is recessed from the main surfaceis formed in the substrate, and

the first electronic element is disposed in the recessed portion forelement disposition.

Appendix 3B

The electronic device according to Appendix 2B,

wherein the recessed portion for element disposition has a recessedportion bottom surface for element disposition that faces in a firstthickness direction that is one thickness direction of the substrate,and a recessed portion lateral surface for element disposition thatstands up from the recessed portion bottom surface for elementdisposition, and

the first electronic element is disposed on the recessed portion bottomsurface for element disposition.

Appendix 4B

The electronic device according to Appendix 3B, wherein the recessedportion bottom surface for element disposition is orthogonal to thethickness direction.

Appendix 5B

The electronic device according to Appendix 3B, wherein the recessedportion lateral surface for element disposition slopes relative to thethickness direction.

Appendix 6B

The electronic device according to Appendix 5B, wherein the recessedportion lateral surface for element disposition is at an angle of 55degrees relative to a plane that is orthogonal to the thicknessdirection.

Appendix 7B

The electronic device according to any of Appendixes 3B to 6B, whereinthe recessed portion lateral surface for element disposition isconnected to the main surface.

Appendix 8B

The electronic device according to Appendix 2B,

wherein an additional recessed portion for element disposition that isrecessed from the recessed portion for element disposition is formed inthe substrate, and

the additional first electronic element is disposed in the additionalrecessed portion for element disposition.

Appendix 9B

The electronic device according to Appendix 2B, wherein a recessedportion for interconnects is formed on the substrate, and the recessedportion for interconnects communicates with the through hole.

Appendix 10B

The electronic device according to Appendix 9B, wherein the recessedportion for interconnects has a region that overlaps with the firstelectronic element as viewed in the thickness direction of thesubstrate.

Appendix 11B

The electronic device according to Appendix 9B or 10B, wherein therecessed portion for interconnects entirely overlaps with the recessedportion for element disposition as viewed in the thickness direction.

Appendix 12B

The electronic device according to Appendix 9B, wherein the recessedportion for interconnects has a recessed portion lateral surface forinterconnects, and the recessed portion lateral surface forinterconnects is connected to the through hole inner surface.

Appendix 13B

The electronic device according to Appendix 12B, wherein the recessedportion lateral surface for interconnects slopes relative to thethickness direction.

Appendix 14B

The electronic device according to Appendix 13B, wherein the recessedportion lateral surface for interconnects is at an angle of 55 degreesrelative to a plane that is orthogonal to the thickness direction.

Appendix 15B

The electronic device according to Appendix 12B, wherein the conductivelayer is formed on the recessed portion lateral surface forinterconnects.

Appendix 16B

The electronic device according to Appendix 15B, wherein the conductivelayer includes a plurality of main surface side interconnects, and theplurality of main surface side interconnects are insulated from eachother and formed on the recessed portion lateral surface forinterconnects.

Appendix 17B

The electronic device according to Appendix 16B, wherein the mainsurface side interconnects have a region that is located closer to acenter of the through hole than is a portion of the conductive layerformed on the through hole inner surface, as viewed in the depthdirection of the through hole.

Appendix 18B

The electronic device according to any of Appendixes 1B to 17B, whereinthe through hole has a depth of 10 to 50 μm.

Appendix 19B

The electronic device according to any of Appendixes 1B to 18B, whereina ratio of the depth of the through hole to a maximum opening size ofthe through hole as viewed in the thickness direction of the substrateis 0.2 to 5.

Appendix 20B

The electronic device according to any of Appendixes 1B to 19B, whereinthere are a plurality of the through hole.

Appendix 21B

The electronic device according to any of Appendixes 1B to 20B, whereinthe through hole inner surface extends in the thickness direction of thesubstrate.

Appendix 22B

The electronic device according to Appendix 1B, wherein the conductivelayer includes a plurality of back surface side interconnects, and theplurality of back surface side interconnects are insulated from eachother and formed on the through hole inner surface.

Appendix 23B

The electronic device according to any of Appendixes 1B to 22B, whereinthe substrate is made of single-crystal semiconductor material.

Appendix 24B

The electronic device according to any of Appendixes 1B to 23B, whereinthe semiconductor material is Si.

Appendix 25B

The electronic device according to any of Appendixes 1B to 24B, whereinthe main surface and the back surface are orthogonal to the thicknessdirection of the substrate and flat.

Appendix 26B

The electronic device according to any of Appendixes 1B to 25B, whereinthe main surface is a (100) surface.

Appendix 27B

The electronic device according to Appendix 2B, further including asecond electronic element disposed on the substrate,

wherein the second electronic element is disposed on an opposite side tothe first electronic element with the through hole sandwichedtherebetween.

Appendix 28B

The electronic device according to Appendix 27B,

wherein the recessed portion for element disposition is a main surfaceside recessed portion for element disposition,

a back surface side recessed portion for element disposition that isrecessed from the back surface is formed in the substrate, and

the second electronic element is disposed in the back surface siderecessed portion for element disposition.

Appendix 29B

The electronic device according to Appendix 28B, further including anadditional second electronic element disposed on the substrate,

wherein the second electronic element and the additional secondelectronic element are stacked one on another,

an additional back surface side recessed portion for element dispositionthat is recessed from the back surface side recessed portion for elementdisposition is formed in the substrate, and

the additional second electronic element is disposed in the additionalback surface side recessed portion for element disposition.

Appendix 30B

The electronic device according to Appendix 1B, further provided with aninsulating layer formed on the substrate,

wherein the insulating layer is interposed between the conductive layerand the substrate.

Appendix 31B

The electronic device according to Appendix 30B, wherein the insulatinglayer is made of SiO₂ or SiN.

Appendix 32B

The electronic device according to Appendix 30B, wherein the insulatinglayer includes a main surface side insulating part, and at least aportion of the main surface side insulating part is formed on the mainsurface of the substrate.

Appendix 33B

The electronic device according to Appendix 32B, wherein the mainsurface side insulating part is formed by thermal oxidation.

Appendix 34B

The electronic device according to Appendix 30B, wherein the insulatinglayer includes a hole inner surface insulating part, and the hole innersurface insulating part is formed on the through hole inner surface.

Appendix 35B

The electronic device according to Appendix 34B, wherein the hole innersurface insulating part is formed by CVD.

Appendix 36B

The electronic device according to Appendix 30B, wherein the insulatinglayer includes a back surface side insulating part, and at least aportion of the back surface side insulating part is formed on the backsurface of the substrate.

Appendix 37B

The electronic device according to Appendix 36B, wherein the backsurface side insulating part is formed by thermal oxidation.

Appendix 38B

The electronic device according to Appendix 1B, wherein the conductivelayer includes a seed layer and a plating layer, the seed layer isinterposed between the substrate and the plating layer.

Appendix 39B

The electronic device according to Appendix 38B, wherein the seed layerhas a thickness of less than or equal to 1 μm, and the plating layer hasa thickness of 3 to 10 μm.

Appendix 40B

The electronic device according to Appendix 39B, wherein the seed layeris made of Cu, and the plating layer is made of Cu.

Appendix 41B

The electronic device according to Appendix 1B, further including a mainsurface side insulating film that is at least partially formed on themain surface,

wherein the conductive layer is interposed between the main surface sideinsulating film and the substrate.

Appendix 42B

The electronic device according to Appendix 41B,

further including a back surface side insulating film that is at leastpartially formed on the back surface,

wherein the back surface side insulating film has a region formed insidethe through hole, and

the conductive layer is interposed between the back surface sideinsulating film and the substrate.

Appendix 43B

The electronic device according to Appendix 42B, wherein the mainsurface side insulating film and the back surface side insulating filmare made of SiN.

Appendix 44B

The electronic device according to Appendix 42B or 43B, wherein the mainsurface side insulating film and the back surface side insulating filmare formed by CVD.

Appendix 45B

The electronic device according to Appendix 2B, further including a mainsurface electrode pad formed on the main surface.

Appendix 46B

The electronic device according to Appendix 2B, further including a backsurface electrode pad formed on the back surface.

Appendix 47B

An electronic device unit including a plurality of the electronic deviceaccording to Appendix 1B, wherein the plurality of electronic devicesare stacked one on another.

Appendix 48B

The electronic device unit according to Appendix 47B, wherein theplurality of electronic devices are joined to each other via aconductive junction element.

The invention claimed is:
 1. An electronic device comprising: asubstrate having an obverse surface and a reverse surface that face inopposite directions to each other, the substrate being made of asemiconductor material; a first electronic element and a firstadditional electronic element that are disposed on the substrate and arestacked one on another; a conductive layer that is electricallyconnected to the first electronic element, wherein the substrate isformed with at least one through-hole that passes through the substrate,the through-hole having a through-hole inner surface, and the conductivelayer is formed on the through-hole inner surface so as to extend from aregion thereof close to the obverse surface to a region thereof close tothe reverse surface, the substrate is formed with an interconnectsrecessed portion, and the interconnects recessed portion communicateswith the through-hole, the interconnects recessed portion has aninterconnects recessed portion lateral surface that is connected to thethrough-hole inner surface, the conductive layer includes a plurality ofobverse surface side interconnects that are insulated from each otherand formed on the interconnects recessed portion lateral surface, andthe obverse surface side interconnects have a region that is locatedcloser to a center of the through-hole than is a portion of theconductive layer formed on the through-hole inner surface, as viewed ina depth direction of the through-hole.
 2. The electronic deviceaccording to claim 1, wherein the substrate is formed with a firstelement-disposition recessed portion that is recessed from the obversesurface, and the first electronic element is disposed in theelement-disposition recessed portion.
 3. The electronic device accordingto claim 2, wherein the element-disposition recessed portion has anelement-disposition recessed portion bottom surface that faces in athickness direction of the substrate, and an element-dispositionrecessed portion lateral surface that stands up from theelement-disposition recessed portion bottom surface, and the firstelectronic element is disposed on the element-disposition recessedportion bottom surface.
 4. The electronic device according to claim 3,wherein the element-disposition recessed portion bottom surface isorthogonal to the thickness direction.
 5. The electronic deviceaccording to claim 3, wherein the element-disposition recessed portionlateral surface slopes relative to the thickness direction.
 6. Theelectronic device according to claim 5, wherein the element-dispositionrecessed portion lateral surface is at an angle of 55 degrees relativeto a plane that is orthogonal to the thickness direction.
 7. Theelectronic device according to claim 3, wherein the element-dispositionrecessed portion lateral surface is connected to the obverse surface. 8.The electronic device according to claim 2, wherein the substrate isformed with an additional element-disposition recessed portion that isrecessed from the first element-disposition recessed portion, and thefirst additional electronic element is disposed in the additionalelement-disposition recessed portion.
 9. The electronic device accordingto claim 2, wherein an entirety of the interconnects recessed portionoverlaps with the element-disposition recessed portion as viewed in thethickness direction.
 10. The electronic device according to claim 2,further comprising a second electronic element disposed on thesubstrate, wherein the second electronic element is disposed on anopposite side to the first electronic element with the through-holesandwiched therebetween.
 11. The electronic device according to claim10, wherein the substrate is formed with a first reverse surface sideelement-disposition recessed portion that is recessed from the reversesurface, and the second electronic element is disposed in the reversesurface side element-disposition recessed portion.
 12. The electronicdevice according to claim 11, further comprising a second additionalelectronic element disposed on the substrate, wherein the secondelectronic element and the second additional electronic element arestacked one on another, the substrate is formed with an additionalreverse surface side element-disposition recessed portion that isrecessed from the first reverse surface side element-dispositionrecessed portion, and the second additional electronic element isdisposed in the additional reverse surface side element-dispositionrecessed portion.
 13. The electronic device according to claim 10,wherein the insulating layer includes a reverse surface side insulatingpart, and at least a portion of the reverse surface side insulating partis formed on the reverse surface of the substrate.
 14. The electronicdevice according to claim 13, wherein the reverse surface sideinsulating part is formed by thermal oxidation.
 15. The electronicdevice according to claim 2, further comprising an obverse surfaceelectrode pad formed on the obverse surface.
 16. The electronic deviceaccording to claim 2, further comprising a reverse surface electrode padformed on the reverse surface.
 17. The electronic device according toclaim 1, wherein the interconnects recessed portion has a region thatoverlaps with the first electronic element as viewed in the thicknessdirection of the substrate.
 18. The electronic device according to claim1, wherein the interconnects recessed portion lateral surface slopesrelative to the thickness direction.
 19. The electronic device accordingto claim 18, wherein the interconnects recessed portion lateral surfaceis at an angle of 55 degrees relative to a plane that is orthogonal tothe thickness direction.
 20. The electronic device according to claim 1,wherein the through-hole has a depth of 10 to 50 μm.
 21. The electronicdevice according to claim 1, wherein a ratio of the depth of thethrough-hole to a maximum opening size of the through-hole as viewed inthe thickness direction of the substrate is 0.2 to
 5. 22. The electronicdevice according to claim 1, wherein the at least one through-holecomprises a plurality of through-holes.
 23. The electronic deviceaccording to claim 1, wherein the through-hole inner surface extends inthe thickness direction of the substrate.
 24. The electronic deviceaccording to claim 1, wherein the conductive layer includes a pluralityof reverse surface side interconnects, and the plurality of reversesurface side interconnects are insulated from each other and formed onthe through-hole inner surface.
 25. The electronic device according toclaim 1, wherein the substrate is made of a single-crystal semiconductormaterial.
 26. The electronic device according to claim 1, wherein thesemiconductor material is Si.
 27. The electronic device according toclaim 1, wherein the obverse surface and the reverse surface areorthogonal to the thickness direction of the substrate and flat.
 28. Theelectronic device according to claim 1, wherein the obverse surface is a(100) surface.
 29. The electronic device according to claim 1, furthercomprising an insulating layer formed on the substrate, wherein theinsulating layer is interposed between the conductive layer and thesubstrate.
 30. The electronic device according to claim 29, wherein theinsulating layer is made of SiO₂ or SiN.
 31. The electronic deviceaccording to claim 29, wherein the insulating layer includes an obversesurface side insulating part, and at least a portion of the obversesurface side insulating part is formed on the obverse surface of thesubstrate.
 32. The electronic device according to claim 31, wherein theobverse surface side insulating part is formed by thermal oxidation. 33.The electronic device according to claim 29, wherein the insulatinglayer includes a hole inner surface insulating part that is formed onthe through-hole inner surface.
 34. The electronic device according toclaim 33, wherein the hole inner surface insulating part is formed byCVD.
 35. The electronic device according to claim 1, wherein theconductive layer includes a seed layer and a plating layer, and the seedlayer is interposed between the substrate and the plating layer.
 36. Theelectronic device according to claim 35, wherein the seed layer has athickness of less than or equal to 1 μm, and the plating layer has athickness of 3 to 10 μm.
 37. The electronic device according to claim36, wherein the seed layer is made of Cu, and the plating layer is madeof Cu.
 38. The electronic device according to claim 1, furthercomprising an obverse surface side insulating film that is at leastpartially formed on the obverse surface, wherein the conductive layer isinterposed between the obverse surface side insulating film and thesubstrate.
 39. The electronic device according to claim 38, furthercomprising a reverse surface side insulating film that is at leastpartially formed on the reverse surface, wherein the reverse surfaceside insulating film has a region formed inside the through-hole, andthe conductive layer is interposed between the reverse surface sideinsulating film and the substrate.
 40. The electronic device accordingto claim 39, wherein the obverse surface side insulating film and thereverse surface side insulating film are made of SiN.
 41. The electronicdevice according to claim 39, wherein the obverse surface sideinsulating film and the reverse surface side insulating film are formedby CVD.
 42. An electronic device unit comprising a plurality ofelectronic devices according to claim 1, wherein the plurality ofelectronic devices are stacked one on another.
 43. The electronic deviceunit according to claim 42, wherein the plurality of electronic devicesare joined to each other via a conductive junction element.